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Extrinsic semiconductor

Index Extrinsic semiconductor

An extrinsic semiconductor is one that has been doped, that is, into which a doping agent has been introduced, giving it different electrical properties than the intrinsic (pure) semiconductor. [1]

50 relations: Acceptor (semiconductors), Alkaline earth metal, Aluminium, Aluminium arsenide, Aluminium phosphide, Amphoterism, Antimony, Arsenic, Beryllium, Bipolar junction transistor, Boron, Boron group, Cadmium, Carbon group, Chalcogen, Charge carrier, Diode, Donor (semiconductors), Dopant, Doping (semiconductor), Electron, Electron hole, Fermi level, Field-effect transistor, Gallium, Gallium arsenide, Gallium nitride, Germanium, Intrinsic semiconductor, JFET, Laser, Light-emitting diode, List of semiconductor materials, MOSFET, P–n junction, Periodic table, Phosphorus, Photodetector, Pnictogen, Selenium, Semiconductor, Silicon, Solar cell, Tellurium, Thermal equilibrium, Thyristor, Transistor, Valence and conduction bands, Valence electron, Zinc.

Acceptor (semiconductors)

In semiconductor physics, an acceptor is a dopant atom that when added to a semiconductor can form a p-type region.

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Alkaline earth metal

The alkaline earth metals are six chemical elements in group 2 of the periodic table.

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Aluminium

Aluminium or aluminum is a chemical element with symbol Al and atomic number 13.

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Aluminium arsenide

Aluminium arsenide or aluminum arsenide is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.

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Aluminium phosphide

Aluminium phosphide (aluminum phosphide) is a highly toxic inorganic compound with the chemical formula used as a wide band gap semiconductor and a fumigant.

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Amphoterism

In chemistry, an amphoteric compound is a molecule or ion that can react both as an acid as well as a base.

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Antimony

Antimony is a chemical element with symbol Sb (from stibium) and atomic number 51.

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Arsenic

Arsenic is a chemical element with symbol As and atomic number 33.

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Beryllium

Beryllium is a chemical element with symbol Be and atomic number 4.

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Bipolar junction transistor

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Boron

Boron is a chemical element with symbol B and atomic number 5.

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Boron group

The boron group are the chemical elements in group 13 of the periodic table, comprising boron (B), aluminium (Al), gallium (Ga), indium (In), thallium (Tl), and perhaps also the chemically uncharacterized nihonium (Nh).

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Cadmium

Cadmium is a chemical element with symbol Cd and atomic number 48.

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Carbon group

The carbon group is a periodic table group consisting of carbon (C), silicon (Si), germanium (Ge), tin (Sn), lead (Pb), and flerovium (Fl).

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Chalcogen

The chalcogens are the chemical elements in group 16 of the periodic table.

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Charge carrier

In physics, a charge carrier is a particle free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors.

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Diode

A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other.

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Donor (semiconductors)

In semiconductor physics, a donor is a dopant atom that, when added to a semiconductor, can form a n-type region.

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Dopant

A dopant, also called a doping agent, is a trace impurity element that is inserted into a substance (in very low concentrations) to alter the electrical or optical properties of the substance.

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Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical properties.

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Electron

The electron is a subatomic particle, symbol or, whose electric charge is negative one elementary charge.

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Electron hole

In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice.

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Fermi level

The Fermi level chemical potential for electrons (or electrochemical potential for electrons), usually denoted by µ or EF, of a body is a thermodynamic quantity, whose significance is the thermodynamic work required to add one electron to the body (not counting the work required to remove the electron from wherever it came from).

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Field-effect transistor

The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device.

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Gallium

Gallium is a chemical element with symbol Ga and atomic number 31.

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Gallium arsenide

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

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Gallium nitride

Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.

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Germanium

Germanium is a chemical element with symbol Ge and atomic number 32.

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Intrinsic semiconductor

An intrinsic(pure) semiconductor, also called an undoped semiconductor or i-type semiconductor, is a pure semiconductor without any significant dopant species present.

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JFET

The junction gate field-effect transistor (JFET or JUGFET) is the simplest type of field-effect transistor.

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Laser

A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation.

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Light-emitting diode

A light-emitting diode (LED) is a two-lead semiconductor light source.

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List of semiconductor materials

Semiconductor materials are nominally small band gap insulators.

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MOSFET

MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.

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P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor.

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Periodic table

The periodic table is a tabular arrangement of the chemical elements, ordered by their atomic number, electron configuration, and recurring chemical properties, whose structure shows periodic trends.

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Phosphorus

Phosphorus is a chemical element with symbol P and atomic number 15.

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Photodetector

Photosensors or photodetectors are sensors of light or other electromagnetic energy.

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Pnictogen

A pnictogen is one of the chemical elements in group 15 of the periodic table.

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Selenium

Selenium is a chemical element with symbol Se and atomic number 34.

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Semiconductor

A semiconductor material has an electrical conductivity value falling between that of a conductor – such as copper, gold etc.

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Silicon

Silicon is a chemical element with symbol Si and atomic number 14.

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Solar cell

A solar cell, or photovoltaic cell, is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect, which is a physical and chemical phenomenon.

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Tellurium

Tellurium is a chemical element with symbol Te and atomic number 52.

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Thermal equilibrium

Two physical systems are in thermal equilibrium if there are no net flow of thermal energy between them when they are connected by a path permeable to heat.

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Thyristor

A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials.

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Transistor

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

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Valence and conduction bands

In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level and thus determine the electrical conductivity of the solid.

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Valence electron

In chemistry, a valence electron is an outer shell electron that is associated with an atom, and that can participate in the formation of a chemical bond if the outer shell is not closed; in a single covalent bond, both atoms in the bond contribute one valence electron in order to form a shared pair.

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Zinc

Zinc is a chemical element with symbol Zn and atomic number 30.

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Redirects here:

N-type (semiconductor), N-type crystals, N-type semiconductor, N-type silicon, P-type (semiconductor), P-type crystals, P-type doping, P-type semiconductor, P-type silicon.

References

[1] https://en.wikipedia.org/wiki/Extrinsic_semiconductor

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