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27 relations: Aluminium gallium phosphide, Attenuation coefficient, Band gap, Cubic crystal system, Dispersion (optics), Epitaxy, Gallium arsenide, Gallium nitride, Gallium phosphide, Heterojunction, Indium gallium arsenide phosphide, Indium gallium nitride, Indium gallium phosphide, Indium phosphide, Laser diode, Light-emitting diode, Metalorganic vapour phase epitaxy, Multi-junction solar cell, Optical pumping, P–n junction, Phosphine, Quantum well, Refractive index, Semiconductor, Solar cell efficiency, Trimethylgallium, Trimethylindium.
Aluminium gallium phosphide
Aluminium gallium phosphide, (Al,Ga)P, a phosphide of aluminium and gallium, is a semiconductor material.
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Attenuation coefficient
Attenuation coefficient or narrow beam attenuation coefficient of the volume of a material characterizes how easily it can be penetrated by a beam of light, sound, particles, or other energy or matter.
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Band gap
In solid-state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron states can exist.
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Cubic crystal system
In crystallography, the cubic (or isometric) crystal system is a crystal system where the unit cell is in the shape of a cube.
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Dispersion (optics)
In optics, dispersion is the phenomenon in which the phase velocity of a wave depends on its frequency.
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Epitaxy
Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate.
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Gallium arsenide
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
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Gallium nitride
Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.
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Gallium phosphide
Gallium phosphide, a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26 eV(300K).
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Heterojunction
A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors.
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Indium gallium arsenide phosphide
Indium gallium arsenide phosphide (x1−xy1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide and indium phosphide.
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Indium gallium nitride
Indium gallium nitride (InGaN, x1−x) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN).
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Indium gallium phosphide
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus.
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Indium phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
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Laser diode
A laser diode, (LD), injection laser diode (ILD), or diode laser is a semiconductor device similar to a light-emitting diode in which the laser beam is created at the diode's junction.
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Light-emitting diode
A light-emitting diode (LED) is a two-lead semiconductor light source.
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Metalorganic vapour phase epitaxy
Metalorganic vapour phase epitaxy (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single or polycrystalline thin films.
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Multi-junction solar cell
Multi-junction (MJ) solar cells are solar cells with multiple p–n junctions made of different semiconductor materials.
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Optical pumping
Optical pumping is a process in which light is used to raise (or "pump") electrons from a lower energy level in an atom or molecule to a higher one.
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P–n junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor.
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Phosphine
Phosphine (IUPAC name: phosphane) is the compound with the chemical formula PH3.
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Quantum well
A quantum well is a potential well with only discrete energy values.
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Refractive index
In optics, the refractive index or index of refraction of a material is a dimensionless number that describes how light propagates through that medium.
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Semiconductor
A semiconductor material has an electrical conductivity value falling between that of a conductor – such as copper, gold etc.
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Solar cell efficiency
Solar cell efficiency refers to the portion of energy in the form of sunlight that can be converted via photovoltaics into electricity.
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Trimethylgallium
Trimethylgallium, Ga(CH3)3, often abbreviated to TMG or TMGa, is the preferred metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of gallium-containing compound semiconductors, such as GaAs, GaN, GaP, GaSb, InGaAs, InGaN, AlGaInP, InGaP and AlInGaNP.
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Trimethylindium
Trimethylindium (abbr: TMI or TMIn), In(CH3)3, (CAS #: 3385-78-2) is the preferred organometallic source of indium for metalorganic vapour phase epitaxy (MOVPE) of indium-containing compound semiconductors, such as InP, InAs, InN, InSb, GaInAs, InGaN, AlGaInP, AlInP, AlInGaNP, etc.
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AlGaInP, AlInGaP, Aluminum gallium indium phosphide, GaAlInP, InAlGaP, InGaAlP.
References
[1] https://en.wikipedia.org/wiki/Aluminium_gallium_indium_phosphide
