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32 nanometer

Index 32 nanometer

The 32 nanometer (32 nm) node is the step following the 45 nanometer process in CMOS semiconductor device fabrication. [1]

28 relations: Advanced Micro Devices, Ambarella Inc., Bulldozer (microarchitecture), CMOS, Common Platform (semiconductors), Die shrink, Dynamic random-access memory, Electron-beam lithography, Gulftown, High-κ dielectric, IBM, IMEC, Immersion lithography, Intel, International Technology Roadmap for Semiconductors, Memory cell (computing), Multiple patterning, Nanometre, Numerical aperture, Photolithography, Sandy Bridge, Semiconductor device fabrication, System on a chip, TSMC, Westmere (microarchitecture), 1080p, 22 nanometer, 45 nanometer.

Advanced Micro Devices

Advanced Micro Devices, Inc. (AMD) is an American multinational semiconductor company based in Santa Clara, California, that develops computer processors and related technologies for business and consumer markets.

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Ambarella Inc.

Ambarella, Inc. is a fabless semiconductor design company, focusing on low-power, high-definition (HD) and Ultra HD video compression and image processing products.

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Bulldozer (microarchitecture)

The AMD Bulldozer Family 15h is a microprocessor microarchitecture for the FX and Opteron line of processors, developed by AMD for the desktop and server markets.

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Complementary metal–oxide–semiconductor, abbreviated as CMOS, is a technology for constructing integrated circuits.

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Common Platform (semiconductors)

Common Platform is a collaboration between IBM, GlobalFoundries, and Samsung Electronics developed to implement a common process technology across all three companies' semiconductor manufacturing facilities.

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Die shrink

The term die shrink (sometimes optical shrink or process shrink) refers to a simple semiconductor scaling of semiconductor devices, mainly transistors.

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Dynamic random-access memory

Dynamic random-access memory (DRAM) is a type of random access semiconductor memory that stores each bit of data in a separate tiny capacitor within an integrated circuit.

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Electron-beam lithography

Electron-beam lithography (often abbreviated as e-beam lithography) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing).

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Gulftown or Westmere-EP is the codename of an up to six-core hyperthreaded Intel processor able to run up to 12 threads in parallel.

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High-κ dielectric

The term high-κ dielectric refers to a material with a high dielectric constant κ (as compared to silicon dioxide).

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The International Business Machines Corporation (IBM) is an American multinational technology company headquartered in Armonk, New York, United States, with operations in over 170 countries.

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Imec is an international R&D and innovation hub, active in the fields of nanoelectronics and digital technologies.

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Immersion lithography

Immersion lithography is a photolithography resolution enhancement technique for manufacturing integrated circuits (ICs) that replaces the usual air gap between the final lens and the wafer surface with a liquid medium that has a refractive index greater than one.

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Intel Corporation (stylized as intel) is an American multinational corporation and technology company headquartered in Santa Clara, California, in the Silicon Valley.

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International Technology Roadmap for Semiconductors

The International Technology Roadmap for Semiconductors (ITRS) is a set of documents produced by a group of semiconductor industry experts.

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Memory cell (computing)

The memory cell is the fundamental building block of computer memory.

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Multiple patterning

Multiple patterning (or multi-patterning) is a class of technologies for manufacturing integrated circuits (ICs), developed for photolithography to enhance the feature density.

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The nanometre (International spelling as used by the International Bureau of Weights and Measures; SI symbol: nm) or nanometer (American spelling) is a unit of length in the metric system, equal to one billionth (short scale) of a metre (m).

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Numerical aperture

In optics, the numerical aperture (NA) of an optical system is a dimensionless number that characterizes the range of angles over which the system can accept or emit light.

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Photolithography, also termed optical lithography or UV lithography, is a process used in microfabrication to pattern parts of a thin film or the bulk of a substrate.

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Sandy Bridge

Sandy Bridge is the codename for the microarchitecture used in the "second generation" of the Intel Core processors (Core i7, i5, i3) - the Sandy Bridge microarchitecture is the successor to Nehalem microarchitecture.

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Semiconductor device fabrication

Semiconductor device fabrication is the process used to create the integrated circuits that are present in everyday electrical and electronic devices.

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System on a chip

A system on a chip or system on chip (SoC) is an integrated circuit (also known as an "IC" or "chip") that integrates all components of a computer or other electronic systems.

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Taiwan Semiconductor Manufacturing Company, Limited (TSMC), also known as Taiwan Semiconductor, is the world's largest dedicated independent (pure-play) semiconductor foundry, with its headquarters and main operations located in the Hsinchu Science and Industrial Park in Hsinchu, Taiwan.

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Westmere (microarchitecture)

Westmere (formerly Nehalem-C) is the name given to the 32 nm die shrink of Nehalem.

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1080p (1920×1080 px; also known as '''Full HD''' or FHD and BT.709) is a set of HDTV high-definition video modes characterized by 1080 horizontal lines of vertical resolution; the p stands for progressive scan, i.e. non-interlaced.

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22 nanometer

The 22 nanometer (22 nm) node is the process step following the 32 nm in CMOS semiconductor device fabrication.

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45 nanometer

Per the International Technology Roadmap for Semiconductors, the 45 nanometer (45 nm) technology node should refer to the average half-pitch of a memory cell manufactured at around the 2007–2008 time frame.

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Redirects here:

28 nanometer, 28 nm, 28nm, 32 nanometre, 32 nm, 32-nanometer, 32nm.


[1] https://en.wikipedia.org/wiki/32_nanometer

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