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10 relations: Anode, Cathode, Field-effect transistor, Flip-flop (electronics), Gate turn-off thyristor, MOSFET, P–n junction, Regenerative process, Thyristor, Transistor.
Anode
An anode is an electrode through which the conventional current enters into a polarized electrical device.
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Cathode
A cathode is the electrode from which a conventional current leaves a polarized electrical device.
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Field-effect transistor
The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device.
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Flip-flop (electronics)
In electronics, a flip-flop or latch is a circuit that has two stable states and can be used to store state information.
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Gate turn-off thyristor
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power semiconductor device.
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MOSFET
MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.
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P–n junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor.
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Regenerative process
In applied probability, a regenerative process is a class of stochastic process with the property that certain portions of the process can be treated as being statistically independent of each other.
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Thyristor
A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials.
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Transistor
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.
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References
[1] https://en.wikipedia.org/wiki/Emitter_turn_off_thyristor
