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Epitaxy

Index Epitaxy

Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate. [1]

86 relations: Adsorption, Albite, Aluminium gallium indium phosphide, Arsine, Atom, Atomic layer epitaxy, Bipolar junction transistor, Boron nitride, Centrifuge, Chemical vapor deposition, CMOS, Condensation, Coordination number, Crystal, Crystal structure, Diborane, Dichlorosilane, Diffusion, Doping (semiconductor), Epitaxial wafer, Etching (microfabrication), Evaporation, Exchange bias, Gallium arsenide, Gallium nitride, Germanium, Graphene, Greek language, Group (periodic table), Hematite, Heterojunction, Hexagonal crystal family, Hydride vapour phase epitaxy, Hydrogen, Hydrogen chloride, International Mineralogical Association, Iodide, Ion, Iridium, Island growth, Isomorphism (crystallography), List of semiconductor materials, Magnetite, Marcasite, Metalorganic vapour phase epitaxy, Microcline, Miller index, Molecular beam epitaxy, Monolayer, Nano-RAM, ..., Nanotechnology, Organic compound, Overlayer, Oxygen, Pascal (unit), Phosphine, Polymorphism (materials science), Pyrite, Quantum cascade laser, Rutile, Sapphire, Scanning tunneling microscope, Seed crystal, Selective area epitaxy, Semiconductor, Semiconductor device fabrication, Silane, Silicon, Silicon dioxide, Silicon on sapphire, Silicon tetrachloride, Single crystal, Single event upset, Space group, Sphalerite, Substrate (electronics), Surface science, Tetragonal crystal system, Thin film, Trichlorosilane, Triclinic crystal system, Vacuum, Vertical-cavity surface-emitting laser, Wake Shield Facility, Wurtzite, Zhores Alferov. Expand index (36 more) »

Adsorption

Adsorption is the adhesion of atoms, ions or molecules from a gas, liquid or dissolved solid to a surface.

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Albite

Albite is a plagioclase feldspar mineral.

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Aluminium gallium indium phosphide

Aluminium gallium indium phosphide (also AlInGaP, InGaAlP, GaInP, etc.) is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices, as it spans a direct bandgap from deep ultraviolet to infrared.

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Arsine

Arsine is an inorganic compound with the formula AsH3.

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Atom

An atom is the smallest constituent unit of ordinary matter that has the properties of a chemical element.

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Atomic layer epitaxy

Atomic layer epitaxy (ALE), now more generally called atomic layer deposition (ALD), is a specialized form of epitaxy that typically deposit alternating monolayers of two elements onto a substrate.

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Bipolar junction transistor

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Boron nitride

Boron nitride is a heat and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN.

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Centrifuge

A centrifuge is a piece of equipment that puts an object in rotation around a fixed axis (spins it in a circle), applying a force perpendicular to the axis of spin (outward) that can be very strong.

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Chemical vapor deposition

Chemical vapor deposition (CVD) is deposition method used to produce high quality, high-performance, solid materials, typically under vacuum.

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CMOS

Complementary metal–oxide–semiconductor, abbreviated as CMOS, is a technology for constructing integrated circuits.

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Condensation

Condensation is the change of the physical state of matter from gas phase into liquid phase, and is the reverse of vapourisation.

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Coordination number

In chemistry, crystallography, and materials science the coordination number, also called ligancy, of a central atom in a molecule or crystal is the number of atoms, molecules or ions bonded to it.

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Crystal

A crystal or crystalline solid is a solid material whose constituents (such as atoms, molecules, or ions) are arranged in a highly ordered microscopic structure, forming a crystal lattice that extends in all directions.

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Crystal structure

In crystallography, crystal structure is a description of the ordered arrangement of atoms, ions or molecules in a crystalline material.

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Diborane

Diborane is the chemical compound consisting of boron and hydrogen with the formula B2H6.

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Dichlorosilane

Dichlorosilane, or DCS as it is commonly known, is a chemical compound with the formula H2SiCl2.

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Diffusion

Diffusion is the net movement of molecules or atoms from a region of high concentration (or high chemical potential) to a region of low concentration (or low chemical potential) as a result of random motion of the molecules or atoms.

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Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical properties.

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Epitaxial wafer

An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics.

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Etching (microfabrication)

Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing.

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Evaporation

Evaporation is a type of vaporization that occurs on the surface of a liquid as it changes into the gaseous phase before reaching its boiling point.

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Exchange bias

Exchange bias or exchange anisotropy occurs in bilayers (or multilayers) of magnetic materials where the hard magnetization behavior of an antiferromagnetic thin film causes a shift in the soft magnetization curve of a ferromagnetic film.

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Gallium arsenide

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

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Gallium nitride

Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.

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Germanium

Germanium is a chemical element with symbol Ge and atomic number 32.

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Graphene

Graphene is a semi-metal with a small overlap between the valence and the conduction bands (zero bandgap material).

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Greek language

Greek (Modern Greek: ελληνικά, elliniká, "Greek", ελληνική γλώσσα, ellinikí glóssa, "Greek language") is an independent branch of the Indo-European family of languages, native to Greece and other parts of the Eastern Mediterranean and the Black Sea.

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Group (periodic table)

In chemistry, a group (also known as a family) is a column of elements in the periodic table of the chemical elements.

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Hematite

Hematite, also spelled as haematite, is the mineral form of iron(III) oxide (Fe2O3), one of several iron oxides.

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Heterojunction

A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors.

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Hexagonal crystal family

In crystallography, the hexagonal crystal family is one of the 6 crystal families, which includes 2 crystal systems (hexagonal and trigonal) and 2 lattice systems (hexagonal and rhombohedral).

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Hydride vapour phase epitaxy

Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides.

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Hydrogen

Hydrogen is a chemical element with symbol H and atomic number 1.

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Hydrogen chloride

The compound hydrogen chloride has the chemical formula and as such is a hydrogen halide.

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International Mineralogical Association

The International Mineralogical Association (IMA) is an international group of 38 national societies.

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Iodide

An iodide ion is the ion I−.

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Ion

An ion is an atom or molecule that has a non-zero net electrical charge (its total number of electrons is not equal to its total number of protons).

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Iridium

Iridium is a chemical element with symbol Ir and atomic number 77.

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Island growth

Island growth is a physical model of deposited film growth and chemical vapor deposition.

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Isomorphism (crystallography)

In crystallography crystals are described as isomorphous if they are closely similar in shape.

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List of semiconductor materials

Semiconductor materials are nominally small band gap insulators.

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Magnetite

Magnetite is a rock mineral and one of the main iron ores, with the chemical formula Fe3O4.

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Marcasite

The mineral marcasite, sometimes called white iron pyrite, is iron sulfide (FeS2) with orthorhombic crystal structure.

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Metalorganic vapour phase epitaxy

Metalorganic vapour phase epitaxy (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single or polycrystalline thin films.

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Microcline

Microcline (KAlSi3O8) is an important igneous rock-forming tectosilicate mineral.

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Miller index

Miller indices form a notation system in crystallography for planes in crystal (Bravais) lattices.

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Molecular beam epitaxy

Molecular beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals.

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Monolayer

A monolayer is a single, closely packed layer of atoms, molecules, or cells.

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Nano-RAM

Nano-RAM is a proprietary computer memory technology from the company Nantero.

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Nanotechnology

Nanotechnology ("nanotech") is manipulation of matter on an atomic, molecular, and supramolecular scale.

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Organic compound

In chemistry, an organic compound is generally any chemical compound that contains carbon.

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Overlayer

An overlayer is a layer of adatoms adsorbed onto a surface, for instance onto the surface of a single crystal.

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Oxygen

Oxygen is a chemical element with symbol O and atomic number 8.

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Pascal (unit)

The pascal (symbol: Pa) is the SI derived unit of pressure used to quantify internal pressure, stress, Young's modulus and ultimate tensile strength.

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Phosphine

Phosphine (IUPAC name: phosphane) is the compound with the chemical formula PH3.

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Polymorphism (materials science)

In materials science, polymorphism is the ability of a solid material to exist in more than one form or crystal structure.

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Pyrite

The mineral pyrite, or iron pyrite, also known as fool's gold, is an iron sulfide with the chemical formula FeS2 (iron(II) disulfide).

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Quantum cascade laser

Quantum cascade lasers (QCLs) are semiconductor lasers that emit in the mid- to far-infrared portion of the electromagnetic spectrum and were first demonstrated by Jerome Faist, Federico Capasso, Deborah Sivco, Carlo Sirtori, Albert Hutchinson, and Alfred Cho at Bell Laboratories in 1994.

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Rutile

Rutile is a mineral composed primarily of titanium dioxide (TiO2).

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Sapphire

Sapphire is a precious gemstone, a variety of the mineral corundum, an aluminium oxide.

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Scanning tunneling microscope

A scanning tunneling microscope (STM) is an instrument for imaging surfaces at the atomic level.

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Seed crystal

A seed crystal is a small piece of single crystal or polycrystal material from which a large crystal of typically the same material is to be grown in a laboratory.

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Selective area epitaxy

Selective area epitaxy is the local growth of epitaxial layer through a patterned dielectric mask (typically SiO2 or Si3O4) deposited on a semiconductor substrate.

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Semiconductor

A semiconductor material has an electrical conductivity value falling between that of a conductor – such as copper, gold etc.

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Semiconductor device fabrication

Semiconductor device fabrication is the process used to create the integrated circuits that are present in everyday electrical and electronic devices.

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Silane

Silane is an inorganic compound with chemical formula, SiH4, making it a group 14 hydride.

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Silicon

Silicon is a chemical element with symbol Si and atomic number 14.

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Silicon dioxide

Silicon dioxide, also known as silica (from the Latin silex), is an oxide of silicon with the chemical formula, most commonly found in nature as quartz and in various living organisms.

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Silicon on sapphire

Silicon on sapphire (SOS) is a hetero-epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 µm) of silicon grown on a sapphire (Al2O3) wafer.

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Silicon tetrachloride

Silicon tetrachloride or tetrachlorosilane is the inorganic compound with the formula SiCl4.

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Single crystal

A single crystal or monocrystalline solid is a material in which the crystal lattice of the entire sample is continuous and unbroken to the edges of the sample, with no grain boundaries.

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Single event upset

A single event upset (SEU) is a change of state caused by one single ionizing particle (ions, electrons, photons...) striking a sensitive node in a micro-electronic device, such as in a microprocessor, semiconductor memory, or power transistors.

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Space group

In mathematics, physics and chemistry, a space group is the symmetry group of a configuration in space, usually in three dimensions.

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Sphalerite

Sphalerite ((Zn, Fe)S) is a mineral that is the chief ore of zinc.

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Substrate (electronics)

A substrate (also called a wafer) is a solid (usually planar) substance onto which a layer of another substance is applied, and to which that second substance adheres.

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Surface science

Surface science is the study of physical and chemical phenomena that occur at the interface of two phases, including solid–liquid interfaces, solid–gas interfaces, solid–vacuum interfaces, and liquid–gas interfaces.

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Tetragonal crystal system

In crystallography, the tetragonal crystal system is one of the 7 crystal systems.

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Thin film

A thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness.

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Trichlorosilane

Trichlorosilane is an inorganic compound with the formula HSiCl3.

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Triclinic crystal system

Triclinic (a ≠ b ≠ c and α ≠ β ≠ γ) In crystallography, the triclinic (or anorthic) crystal system is one of the 7 crystal systems.

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Vacuum

Vacuum is space devoid of matter.

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Vertical-cavity surface-emitting laser

The vertical-cavity surface-emitting laser, or VCSEL, is a type of semiconductor laser diode with laser beam emission perpendicular from the top surface, contrary to conventional edge-emitting semiconductor lasers (also in-plane lasers) which emit from surfaces formed by cleaving the individual chip out of a wafer.

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Wake Shield Facility

Wake Shield Facility is an experimental science platform that was placed in low Earth orbit by the Space Shuttle.

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Wurtzite

Wurtzite is a zinc iron sulfide mineral ((Zn,Fe)S) a less frequently encountered mineral form of sphalerite.

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Zhores Alferov

Zhores Ivanovich Alferov (Жоре́с Ива́нович Алфёров,; Жарэс Іва́навіч Алфёраў; born 15 March 1930) is a Soviet and Russian physicist and academic who contributed significantly to the creation of modern heterostructure physics and electronics.

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Redirects here:

CFFG, Centifugually formed film growth, Epilayer, Epitaxial, Epitaxial growth, Epitaxially, Epitaxis, Heteroepitaxy, Heterotopotaxy, Homoepitaxy, Liquid phase epitaxy.

References

[1] https://en.wikipedia.org/wiki/Epitaxy

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