Faster access than browser!
18 relations: Advanced Micro Devices, Chenming Hu, CMOS, IBM, Intel, MOSFET, Motorola, Multigate device, Nanometre, Nvidia, Omega, Picosecond, Propagation delay, Silicon on insulator, TSMC, Volt, Wafer (electronics), 32 nanometer.
Advanced Micro Devices
Advanced Micro Devices, Inc. (AMD) is an American multinational semiconductor company based in Santa Clara, California, that develops computer processors and related technologies for business and consumer markets.
New!!: FinFET and Advanced Micro Devices · See more »
Chenming Hu
Chenming Calvin Hu is an electronic engineer who specializes in microelectronics.
New!!: FinFET and Chenming Hu · See more »
CMOS
Complementary metal–oxide–semiconductor, abbreviated as CMOS, is a technology for constructing integrated circuits.
New!!: FinFET and CMOS · See more »
IBM
The International Business Machines Corporation (IBM) is an American multinational technology company headquartered in Armonk, New York, United States, with operations in over 170 countries.
New!!: FinFET and IBM · See more »
Intel
Intel Corporation (stylized as intel) is an American multinational corporation and technology company headquartered in Santa Clara, California, in the Silicon Valley.
New!!: FinFET and Intel · See more »
MOSFET
MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.
New!!: FinFET and MOSFET · See more »
Motorola
Motorola, Inc. was an American multinational telecommunications company founded on September 25, 1928, based in Schaumburg, Illinois.
New!!: FinFET and Motorola · See more »
Multigate device
A multigate device or multiple-gate field-effect transistor (MuGFET) refers to a MOSFET (metal–oxide–semiconductor field-effect transistor) that incorporates more than one gate into a single device.
New!!: FinFET and Multigate device · See more »
Nanometre
The nanometre (International spelling as used by the International Bureau of Weights and Measures; SI symbol: nm) or nanometer (American spelling) is a unit of length in the metric system, equal to one billionth (short scale) of a metre (m).
New!!: FinFET and Nanometre · See more »
Nvidia
Nvidia Corporation (most commonly referred to as Nvidia, stylized as NVIDIA, or (due to their logo) nVIDIA) is an American technology company incorporated in Delaware and based in Santa Clara, California.
New!!: FinFET and Nvidia · See more »
Omega
Omega (capital: Ω, lowercase: ω; Greek ὦ, later ὦ μέγα, Modern Greek ωμέγα) is the 24th and last letter of the Greek alphabet.
New!!: FinFET and Omega · See more »
Picosecond
A picosecond is an SI unit of time equal to 10−12 or 1/1,000,000,000,000 (one trillionth) of a second.
New!!: FinFET and Picosecond · See more »
Propagation delay
Propagation delay is a technical term that can have a different meaning depending on the context.
New!!: FinFET and Propagation delay · See more »
Silicon on insulator
Silicon on insulator (SOI) technology refers to the use of a layered silicon–insulator–silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance, thereby improving performance.
New!!: FinFET and Silicon on insulator · See more »
TSMC
Taiwan Semiconductor Manufacturing Company, Limited (TSMC), also known as Taiwan Semiconductor, is the world's largest dedicated independent (pure-play) semiconductor foundry, with its headquarters and main operations located in the Hsinchu Science and Industrial Park in Hsinchu, Taiwan.
New!!: FinFET and TSMC · See more »
Volt
The volt (symbol: V) is the derived unit for electric potential, electric potential difference (voltage), and electromotive force.
New!!: FinFET and Volt · See more »
Wafer (electronics)
A wafer, also called a slice or substrate, is a thin slice of semiconductor material, such as a crystalline silicon, used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.
New!!: FinFET and Wafer (electronics) · See more »
32 nanometer
The 32 nanometer (32 nm) node is the step following the 45 nanometer process in CMOS semiconductor device fabrication.
New!!: FinFET and 32 nanometer · See more »
