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Floating body effect

Index Floating body effect

The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. [1]

11 relations: Advanced Micro Devices, Carrier generation and recombination, Dynamic random-access memory, EE Times, Microprocessor Report, Silicon on insulator, SK Hynix, T-RAM, Threshold voltage, Transistor, Z-RAM.

Advanced Micro Devices

Advanced Micro Devices, Inc. (AMD) is an American multinational semiconductor company based in Santa Clara, California, that develops computer processors and related technologies for business and consumer markets.

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Carrier generation and recombination

In the solid-state physics of semiconductors, carrier generation and recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated.

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Dynamic random-access memory

Dynamic random-access memory (DRAM) is a type of random access semiconductor memory that stores each bit of data in a separate tiny capacitor within an integrated circuit.

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EE Times

EE Times (Electronic Engineering Times) is an online electronics industry magazine published in the United States by AspenCore Media an Arrow Electronics company.

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Microprocessor Report

Microprocessor Report, is a publication for engineers and other industry professionals on microprocessors.

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Silicon on insulator

Silicon on insulator (SOI) technology refers to the use of a layered silicon–insulator–silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance, thereby improving performance.

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SK Hynix

SK Hynix Inc. is a South Korean memory semiconductor supplier of dynamic random-access memory (DRAM) chips and flash memory chips.

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T-RAM

Thyristor RAM (T-RAM) is a new (2009) type of random-access memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed.

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Threshold voltage

The threshold voltage, commonly abbreviated as Vth, of a field-effect transistor (FET) is the minimum gate-to-source voltage VGS (th) that is needed to create a conducting path between the source and drain terminals.

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Transistor

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

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Z-RAM

Z-RAM is a tradename of a now-obsolete dynamic random-access memory technology that did not require a capacitor to maintain its state.

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References

[1] https://en.wikipedia.org/wiki/Floating_body_effect

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