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Gate turn-off thyristor

Index Gate turn-off thyristor

A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power semiconductor device. [1]

16 relations: Anode, Cathode, Diode, Frequency, Gate, General Electric, Insulated-gate bipolar transistor, Integrated gate-commutated thyristor, P–n junction, Saturable reactor, Semiconductor device, Silicon controlled rectifier, Snubber, Thyristor, Traction (engineering), Transistor.


An anode is an electrode through which the conventional current enters into a polarized electrical device.

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A cathode is the electrode from which a conventional current leaves a polarized electrical device.

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A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other.

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Frequency is the number of occurrences of a repeating event per unit of time.

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A gate or gateway is a point of entry to a space which is enclosed by walls.

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General Electric

General Electric Company (GE) is an American multinational conglomerate incorporated in New York and headquartered in Boston, Massachusetts.

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Insulated-gate bipolar transistor

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.

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Integrated gate-commutated thyristor

The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment.

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P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor.

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Saturable reactor

A saturable reactor in electrical engineering is a special form of inductor where the magnetic core can be deliberately saturated by a direct electric current in a control winding.

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Semiconductor device

Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors.

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Silicon controlled rectifier

A silicon controlled rectifier or semiconductor-controlled rectifier is a four-layer solid-state current-controlling device.

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A snubber is a device used to suppress ("snub") a phenomenon such as voltage transients in electrical systems, pressure transients in fluid systems (caused by for example water hammer) or excess force or rapid movement in mechanical systems.

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A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials.

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Traction (engineering)

Traction, or tractive force, is the force used to generate motion between a body and a tangential surface, through the use of dry friction, though the use of shear force of the surface is also commonly used.

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A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

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Redirects here:

Distributed Buffer - Gate Turn-off Thyristor (DB-GTO), GTO (Thyristor), GTO (thyristor), GTO inverter.


[1] https://en.wikipedia.org/wiki/Gate_turn-off_thyristor

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