16 relations: Anode, Cathode, Diode, Frequency, Gate, General Electric, Insulated-gate bipolar transistor, Integrated gate-commutated thyristor, P–n junction, Saturable reactor, Semiconductor device, Silicon controlled rectifier, Snubber, Thyristor, Traction (engineering), Transistor.
An anode is an electrode through which the conventional current enters into a polarized electrical device.
A cathode is the electrode from which a conventional current leaves a polarized electrical device.
A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other.
Frequency is the number of occurrences of a repeating event per unit of time.
A gate or gateway is a point of entry to a space which is enclosed by walls.
General Electric Company (GE) is an American multinational conglomerate incorporated in New York and headquartered in Boston, Massachusetts.
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.
The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment.
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor.
A saturable reactor in electrical engineering is a special form of inductor where the magnetic core can be deliberately saturated by a direct electric current in a control winding.
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors.
A silicon controlled rectifier or semiconductor-controlled rectifier is a four-layer solid-state current-controlling device.
A snubber is a device used to suppress ("snub") a phenomenon such as voltage transients in electrical systems, pressure transients in fluid systems (caused by for example water hammer) or excess force or rapid movement in mechanical systems.
A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials.
Traction, or tractive force, is the force used to generate motion between a body and a tangential surface, through the use of dry friction, though the use of shear force of the surface is also commonly used.
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.