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5 relations: Fairchild Semiconductor, Gate turn-off thyristor, MOSFET, Silicon controlled rectifier, Thyristor.
Fairchild Semiconductor
Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California.
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Gate turn-off thyristor
A gate turn-off thyristor (GTO) is a special type of thyristor, which is a high-power semiconductor device.
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MOSFET
MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.
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Silicon controlled rectifier
A silicon controlled rectifier or semiconductor-controlled rectifier is a four-layer solid-state current-controlling device.
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Thyristor
A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials.
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MOS Controlled Thyristor, MOS controlled thyristor, MOS controlled thyristors.
