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MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. [1]

161 relations: Acceptor (semiconductors), Ampere, Analogue electronics, Artistic license, Atom, Atomic layer deposition, Automatic gain control, Ballistic conduction, Band gap, Bell Labs, BiCMOS, Bipolar junction transistor, BSIM, Capacitance, Capacitor, Cascade amplifier, Cascode, Channel length modulation, Chemical compound, Cleanroom, CMOS, Cobalt, Cosmic ray, Current–voltage characteristic, Dawon Kahng, Depletion and enhancement modes, Depletion region, Design for manufacturability, Dielectric, Digital electronics, Doping (semiconductor), Drain-induced barrier lowering, Early effect, Electrical conductor, Electrical resistivity and conductivity, Electron, Electron hole, Electron mobility, Electronvolt, Epitaxy, Fermi energy, Fermi–Dirac statistics, Field-effect transistor, FinFET, Floating-gate MOSFET, Frequency mixer, Gallium arsenide, Gamma ray, Gate dielectric, Gauss's law, ..., Gordon Moore, Gyrator, Hafnium, Heat sink, High-electron-mobility transistor, High-κ dielectric, IBM, Integrated circuit, Intel, International Technology Roadmap for Semiconductors, JFET, Journal of Materials Chemistry, Julius Edgar Lilienfeld, LDMOS, Leakage (electronics), LOCOS, Logic gate, Match, Metal–semiconductor junction, Micrometre, Microprocessor, Microprocessor chronology, Miller effect, Misnomer, Mixed-signal integrated circuit, Moore's law, Nanometre, Neutron, Nickel, NMOS logic, Noise figure, Nonmetal, NXP Semiconductors, Operational amplifier, Outer space, Overdrive voltage, P–n junction, Philips, Photolithography, Planar process, PMOS logic, Polyacetylene, Polycrystalline silicon, Polysilicon depletion effect, Power (physics), Power electronics, Power law, Power MOSFET, Process variation (semiconductor), Proton, Pullulan, Quantum mechanics, Quantum tunnelling, Radiation, Radiation hardening, Radio frequency, RC time constant, Relative permittivity, Reliability (semiconductor), Reliability engineering, RF front end, Robert H. Dennard, Salicide, Saturation velocity, Semiconductor, Semiconductor device fabrication, Short-channel effect, Siemens, Signal, Silicide, Silicon, Silicon dioxide, Silicon on insulator, Silicon oxynitride, Silicon-germanium, Solar flare, Sound reinforcement system, Statistical process control, Subthreshold conduction, Surface-mount technology, Switch, Switched capacitor, Switched-mode power supply, Tantalum, Tantalum nitride, Telefunken, Television, Tetrode, Thermal oxidation, Thermal runaway, Three-state logic, Threshold voltage, Titanium, Titanium nitride, TO-263, Transconductance, Transistor, Transistor model, Transistor–transistor logic, Tungsten, Ultra high frequency, Valence and conduction bands, Variable-frequency drive, Volt, Wafer (electronics), Watt, Work function, X-ray, Zirconium, 45 nanometer, 65-nanometer process. Expand index (111 more) »

Acceptor (semiconductors)

In semiconductor physics, an acceptor is a dopant atom that when added to a semiconductor can form a p-type region.

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The ampere (symbol: A), often shortened to "amp",SI supports only the use of symbols and deprecates the use of abbreviations for units.

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Analogue electronics

Analogue electronics (also spelled analog electronics) are electronic systems with a continuously variable signal, in contrast to digital electronics where signals usually take only two levels.

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Artistic license

Artistic license (also known as art license, historical license, dramatic license, poetic license, narrative license, licentia poetica, creative license, or simply license) is a colloquial term, sometimes a euphemism, used to denote the distortion of fact, alteration of the conventions of grammar or language, or rewording of pre-existing text made by an artist in the name of art.

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An atom is the smallest constituent unit of ordinary matter that has the properties of a chemical element.

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Atomic layer deposition

Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas phase chemical process.

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Automatic gain control

Automatic gain control (AGC), also called automatic volume control (AVC), is a closed-loop feedback regulating circuit in an amplifier or chain of amplifiers, the purpose of which is to maintain a suitable signal amplitude at its output, despite variation of the signal amplitude at the input.

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Ballistic conduction

Ballistic conduction (ballistic transport) is the transport of electrons in a medium having negligible electrical resistivity caused by scattering.

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Band gap

In solid-state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron states can exist.

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Bell Labs

Nokia Bell Labs (formerly named AT&T Bell Laboratories, Bell Telephone Laboratories and Bell Labs) is an American research and scientific development company, owned by Finnish company Nokia.

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BiCMOS is an evolved semiconductor technology that integrates two formerly separate semiconductor technologies, those of the bipolar junction transistor and the CMOS transistor, in a single integrated circuit device.

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Bipolar junction transistor

|- align.

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BSIM (Berkeley Short-channel IGFET Model) refers to a family of MOSFET transistor models for integrated circuit design.

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Capacitance is the ratio of the change in an electric charge in a system to the corresponding change in its electric potential.

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A capacitor is a passive two-terminal electrical component that stores potential energy in an electric field.

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Cascade amplifier

A cascade amplifier is any two-port network constructed from a series of amplifiers, where each amplifier sends its output to the input of the next amplifier in a daisy chain.

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The cascode is a two-stage amplifier that consists of a common-emitter stage feeding into a common-base stage.

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Channel length modulation

One of several short-channel effects in MOSFET scaling, channel length modulation (CLM) is a shortening of the length of the inverted channel region with increase in drain bias for large drain biases.

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Chemical compound

A chemical compound is a chemical substance composed of many identical molecules (or molecular entities) composed of atoms from more than one element held together by chemical bonds.

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A cleanroom or clean room is a situation, ordinarily utilized as a part of assembling, including of pharmaceutical items or logical research, and in addition aviation semiconductor building applications with a low level of natural toxins, for example, tiny, airborne organisms, vaporized particles, and concoction vapors.

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Complementary metal–oxide–semiconductor, abbreviated as CMOS, is a technology for constructing integrated circuits.

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Cobalt is a chemical element with symbol Co and atomic number 27.

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Cosmic ray

Cosmic rays are high-energy radiation, mainly originating outside the Solar System and even from distant galaxies.

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Current–voltage characteristic

A current–voltage characteristic or I–V curve (current–voltage curve) is a relationship, typically represented as a chart or graph, between the electric current through a circuit, device, or material, and the corresponding voltage, or potential difference across it.

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Dawon Kahng

Dawon Kahng (May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer known for his work at Solid-State Electronics.

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Depletion and enhancement modes

In field effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an ON state or an OFF state at zero gate–source voltage.

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Depletion region

In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field.

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Design for manufacturability

Design for manufacturability (also sometimes known as design for manufacturing or DFM) is the general engineering practice of designing products in such a way that they are easy to manufacture.

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A dielectric (or dielectric material) is an electrical insulator that can be polarized by an applied electric field.

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Digital electronics

Digital electronics or digital (electronic) circuits are electronics that operate on digital signals.

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Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical properties.

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Drain-induced barrier lowering

Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages.

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Early effect

The Early effect, named after its discoverer James M. Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage.

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Electrical conductor

In physics and electrical engineering, a conductor is an object or type of material that allows the flow of an electrical current in one or more directions.

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Electrical resistivity and conductivity

Electrical resistivity (also known as resistivity, specific electrical resistance, or volume resistivity) is a fundamental property that quantifies how strongly a given material opposes the flow of electric current.

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The electron is a subatomic particle, symbol or, whose electric charge is negative one elementary charge.

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Electron hole

In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice.

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Electron mobility

In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field.

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In physics, the electronvolt (symbol eV, also written electron-volt and electron volt) is a unit of energy equal to approximately joules (symbol J).

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Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate.

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Fermi energy

The Fermi energy is a concept in quantum mechanics usually referring to the energy difference between the highest and lowest occupied single-particle states in a quantum system of non-interacting fermions at absolute zero temperature.

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Fermi–Dirac statistics

In quantum statistics, a branch of physics, Fermi–Dirac statistics describe a distribution of particles over energy states in systems consisting of many identical particles that obey the Pauli exclusion principle.

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Field-effect transistor

The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device.

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A Fin Field-effect transistor (FinFET) is a MOSFET tri-gate transistor built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure.

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Floating-gate MOSFET

The floating-gate MOSFET (FGMOS) is a field-effect transistor, whose structure is similar to a conventional MOSFET.

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Frequency mixer

In electronics, a mixer, or frequency mixer, is a nonlinear electrical circuit that creates new frequencies from two signals applied to it.

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Gallium arsenide

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

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Gamma ray

A gamma ray or gamma radiation (symbol γ or \gamma), is penetrating electromagnetic radiation arising from the radioactive decay of atomic nuclei.

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Gate dielectric

A gate dielectric is a dielectric used between the gate and substrate of a field-effect transistor.

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Gauss's law

In physics, Gauss's law, also known as Gauss's flux theorem, is a law relating the distribution of electric charge to the resulting electric field.

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Gordon Moore

Gordon Earle Moore (born January 3, 1929) is an American businessman, engineer, co-founder and chairman emeritus of Intel Corporation, and the author of Moore's law.

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A gyrator is a passive, linear, lossless, two-port electrical network element proposed in 1948 by Bernard D. H. Tellegen as a hypothetical fifth linear element after the resistor, capacitor, inductor and ideal transformer.

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Hafnium is a chemical element with symbol Hf and atomic number 72.

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Heat sink

A heat sink (also commonly spelled heatsink) is a passive heat exchanger that transfers the heat generated by an electronic or a mechanical device to a fluid medium, often air or a liquid coolant, where it is dissipated away from the device, thereby allowing regulation of the device's temperature at optimal levels.

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High-electron-mobility transistor

A High-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for MOSFET).

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High-κ dielectric

The term high-κ dielectric refers to a material with a high dielectric constant κ (as compared to silicon dioxide).

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The International Business Machines Corporation (IBM) is an American multinational technology company headquartered in Armonk, New York, United States, with operations in over 170 countries.

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Integrated circuit

An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, normally silicon.

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Intel Corporation (stylized as intel) is an American multinational corporation and technology company headquartered in Santa Clara, California, in the Silicon Valley.

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International Technology Roadmap for Semiconductors

The International Technology Roadmap for Semiconductors (ITRS) is a set of documents produced by a group of semiconductor industry experts.

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The junction gate field-effect transistor (JFET or JUGFET) is the simplest type of field-effect transistor.

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Journal of Materials Chemistry

The Journal of Materials Chemistry was a weekly peer-reviewed scientific journal covering the applications, properties and synthesis of new materials.

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Julius Edgar Lilienfeld

Julius Edgar Lilienfeld (April 18, 1882 – August 28, 1963) was a Jewish Austro-Hungarian-born German-American physicist and electronic engineer, credited with the first patents on the field-effect transistor (FET) (1925) and electrolytic capacitor (1931).

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LDMOS (laterally diffused metal oxide semiconductor) transistors are used in microwave/RF power amplifiers.

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Leakage (electronics)

In electronics, leakage may refer to a gradual loss of energy from a charged capacitor.

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LOCOS, short for LOCal Oxidation of Silicon, is a microfabrication process where silicon dioxide is formed in selected areas on a silicon wafer having the Si-SiO2 interface at a lower point than the rest of the silicon surface.

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Logic gate

In electronics, a logic gate is an idealized or physical device implementing a Boolean function; that is, it performs a logical operation on one or more binary inputs and produces a single binary output.

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A match is a tool for starting a fire.

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Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of junction in which a metal comes in close contact with a semiconductor material.

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The micrometre (International spelling as used by the International Bureau of Weights and Measures; SI symbol: μm) or micrometer (American spelling), also commonly known as a micron, is an SI derived unit of length equaling (SI standard prefix "micro-".

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A microprocessor is a computer processor that incorporates the functions of a central processing unit on a single integrated circuit (IC), or at most a few integrated circuits.

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Microprocessor chronology

The first microprocessors were manufactured in the 1970s.

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Miller effect

In electronics, the Miller effect accounts for the increase in the equivalent input capacitance of an inverting voltage amplifier due to amplification of the effect of capacitance between the input and output terminals.

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A misnomer is a name or term that suggests an idea that is known to be wrong.

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Mixed-signal integrated circuit

A mixed-signal integrated circuit is any integrated circuit that has both analog circuits and digital circuits on a single semiconductor die.

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Moore's law

Moore's law is the observation that the number of transistors in a dense integrated circuit doubles about every two years.

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The nanometre (International spelling as used by the International Bureau of Weights and Measures; SI symbol: nm) or nanometer (American spelling) is a unit of length in the metric system, equal to one billionth (short scale) of a metre (m).

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Nickel is a chemical element with symbol Ni and atomic number 28.

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NMOS logic

N-type metal-oxide-semiconductor logic uses n-type field-effect transistors (MOSFETs) to implement logic gates and other digital circuits.

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Noise figure

Noise figure (NF) and noise factor (F) are measures of degradation of the signal-to-noise ratio (SNR), caused by components in a signal chain.

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Apart from hydrogen, nonmetals are located in the p-block. Helium, as an s-block element, would normally be placed next to hydrogen and above beryllium. However, since it is a noble gas, it is instead placed above neon (in the p-block). In chemistry, a nonmetal (or non-metal) is a chemical element that mostly lacks metallic attributes.

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NXP Semiconductors

NXP Semiconductors N.V. is a Dutch global semiconductor manufacturer headquartered in Eindhoven, Netherlands.

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Operational amplifier

An operational amplifier (often op-amp or opamp) is a DC-coupled high-gain electronic voltage amplifier with a differential input and, usually, a single-ended output.

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Outer space

Outer space, or just space, is the expanse that exists beyond the Earth and between celestial bodies.

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Overdrive voltage

Overdrive voltage, usually abbreviated as VOV, is typically referred to in the context of MOSFET transistors.

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P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor.

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Koninklijke Philips N.V. (Philips, stylized as PHILIPS) is a Dutch multinational technology company headquartered in Amsterdam currently focused in the area of healthcare.

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Photolithography, also termed optical lithography or UV lithography, is a process used in microfabrication to pattern parts of a thin film or the bulk of a substrate.

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Planar process

The planar process is a manufacturing process used in the semiconductor industry to build individual components of a transistor, and in turn, connect those transistors together.

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PMOS logic

P-type metal-oxide-semiconductor logic uses p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits.

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Polyacetylene (IUPAC name: polyethyne) usually refers to an organic polymer with the repeating unit (C2H2)n.

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Polycrystalline silicon

Polycrystalline silicon, also called polysilicon or poly-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry.

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Polysilicon depletion effect

Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is observed, leading to unpredicted behaviour of the electronic circuit.

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Power (physics)

In physics, power is the rate of doing work, the amount of energy transferred per unit time.

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Power electronics

Power electronics is the application of solid-state electronics to the control and conversion of electric power.

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Power law

In statistics, a power law is a functional relationship between two quantities, where a relative change in one quantity results in a proportional relative change in the other quantity, independent of the initial size of those quantities: one quantity varies as a power of another.

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A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.

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Process variation (semiconductor)

Process variation is the naturally occurring variation in the attributes of transistors (length, widths, oxide thickness) when integrated circuits are fabricated.

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| magnetic_moment.

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Pullulan is a polysaccharide polymer consisting of maltotriose units, also known as α-1,4-;α-1,6-glucan'.

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Quantum mechanics

Quantum mechanics (QM; also known as quantum physics, quantum theory, the wave mechanical model, or matrix mechanics), including quantum field theory, is a fundamental theory in physics which describes nature at the smallest scales of energy levels of atoms and subatomic particles.

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Quantum tunnelling

Quantum tunnelling or tunneling (see spelling differences) is the quantum mechanical phenomenon where a particle tunnels through a barrier that it classically cannot surmount.

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In physics, radiation is the emission or transmission of energy in the form of waves or particles through space or through a material medium.

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Radiation hardening

Radiation hardening is the act of making electronic components and systems resistant to damage or malfunctions caused by ionizing radiation (particle radiation and high-energy electromagnetic radiation), such as those encountered in outer space and high-altitude flight, around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

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Radio frequency

Radio frequency (RF) refers to oscillatory change in voltage or current in a circuit, waveguide or transmission line in the range extending from around twenty thousand times per second to around three hundred billion times per second, roughly between the upper limit of audio and the lower limit of infrared.

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RC time constant

The RC time constant, also called tau, the time constant (in seconds) of an RC circuit, is equal to the product of the circuit resistance (in ohms) and the circuit capacitance (in farads), i.e. It is the time required to charge the capacitor, through the resistor, from an initial charge voltage of zero to ≈63.2 percent of the value of an applied DC voltage, or to discharge the capacitor through the same resistor to ≈36.8 percent of its initial charge voltage.

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Relative permittivity

The relative permittivity of a material is its (absolute) permittivity expressed as a ratio relative to the permittivity of vacuum.

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Reliability (semiconductor)

Reliability of semiconductor devices can be summarized as follows.

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Reliability engineering

Reliability engineering is a sub-discipline of systems engineering that emphasizes dependability in the lifecycle management of a product.

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RF front end

In a radio receiver circuit, the RF front end is a generic term for all the circuitry between the antenna up to and including the mixer stage.

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Robert H. Dennard

Robert Dennard (born September 5, 1932) is an American electrical engineer and inventor.

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The term salicide refers to a technology used in the microelectronics industry used to form electrical contacts between the semiconductor device and the supporting interconnect structure.

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Saturation velocity

Saturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields.

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A semiconductor material has an electrical conductivity value falling between that of a conductor – such as copper, gold etc.

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Semiconductor device fabrication

Semiconductor device fabrication is the process used to create the integrated circuits that are present in everyday electrical and electronic devices.

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Short-channel effect

In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion-layer widths of the source and drain junctions.

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Siemens AG is a German conglomerate company headquartered in Berlin and Munich and the largest industrial manufacturing company in Europe with branch offices abroad.

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A signal as referred to in communication systems, signal processing, and electrical engineering is a function that "conveys information about the behavior or attributes of some phenomenon".

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A silicide is a compound that has silicon with (usually) more electropositive elements.

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Silicon is a chemical element with symbol Si and atomic number 14.

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Silicon dioxide

Silicon dioxide, also known as silica (from the Latin silex), is an oxide of silicon with the chemical formula, most commonly found in nature as quartz and in various living organisms.

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Silicon on insulator

Silicon on insulator (SOI) technology refers to the use of a layered silicon–insulator–silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance, thereby improving performance.

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Silicon oxynitride

Silicon oxynitride is a ceramic material with the chemical formula SiOxNy.

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SiGe, or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex.

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Solar flare

A solar flare is a sudden flash of increased Sun's brightness, usually observed near its surface.

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Sound reinforcement system

A sound reinforcement system is the combination of microphones, signal processors, amplifiers, and loudspeakers in enclosures all controlled by a mixing console that makes live or pre-recorded sounds louder and may also distribute those sounds to a larger or more distant audience.

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Statistical process control

Statistical process control (SPC) is a method of quality control which employs statistical methods to monitor and control a process.

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Subthreshold conduction

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

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Surface-mount technology

Surface-mount technology (SMT) is a method for producing electronic circuits in which the components are mounted or placed directly onto the surface of printed circuit boards (PCBs).

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In electrical engineering, a switch is an electrical component that can "make" or "break" an electrical circuit, interrupting the current or diverting it from one conductor to another.

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Switched capacitor

A switched capacitor is an electronic circuit element used for discrete-time signal processing.

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Switched-mode power supply

A switched-mode power supply (switching-mode power supply, switch-mode power supply, switched power supply, SMPS, or switcher) is an electronic power supply that incorporates a switching regulator to convert electrical power efficiently.

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Tantalum is a chemical element with symbol Ta and atomic number 73.

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Tantalum nitride

Tantalum nitride (TaN) is an inorganic chemical compound.

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Telefunken was a German radio and television apparatus company, founded in Berlin in 1903, as a joint venture of Siemens & Halske and the Allgemeine Elektricitäts-Gesellschaft (AEG) (General electricity company).

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Television (TV) is a telecommunication medium used for transmitting moving images in monochrome (black and white), or in colour, and in two or three dimensions and sound.

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A tetrode is a vacuum tube (called valve in British English) having four active electrodes.

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Thermal oxidation

In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer.

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Thermal runaway

Thermal runaway occurs in situations where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result.

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Three-state logic

In digital electronics three-state, tri-state, or 3-state logic allows an output port to assume a high impedance state, effectively removing the output from the circuit, in addition to the 0 and 1 logic levels.

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Threshold voltage

The threshold voltage, commonly abbreviated as Vth, of a field-effect transistor (FET) is the minimum gate-to-source voltage VGS (th) that is needed to create a conducting path between the source and drain terminals.

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Titanium is a chemical element with symbol Ti and atomic number 22.

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Titanium nitride

Titanium nitride (sometimes known as tinite) is an extremely hard ceramic material, often used as a coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties.

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The D2PAK or DDPAK, standardized as TO-263, refers to a semiconductor package type intended for surface mounting on circuit boards.

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Transconductance (for transfer conductance), also infrequently called mutual conductance, is the electrical characteristic relating the current through the output of a device to the voltage across the input of a device.

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A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

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Transistor model

Transistors are simple devices with complicated behavior.

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Transistor–transistor logic

Transistor–transistor logic (TTL) is a logic family built from bipolar junction transistors.

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Tungsten, or wolfram, is a chemical element with symbol W (referring to wolfram) and atomic number 74.

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Ultra high frequency

Ultra high frequency (UHF) is the ITU designation for radio frequencies in the range between 300 megahertz (MHz) and 3 gigahertz (GHz), also known as the decimetre band as the wavelengths range from one meter to one decimeter.

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Valence and conduction bands

In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level and thus determine the electrical conductivity of the solid.

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Variable-frequency drive

A variable-frequency drive (VFD; also termed adjustable-frequency drive, “variable-voltage/variable-frequency (VVVF) drive”, variable speed drive, AC drive, micro drive or inverter drive) is a type of adjustable-speed drive used in electro-mechanical drive systems to control AC motor speed and torque by varying motor input frequency and voltage.

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The volt (symbol: V) is the derived unit for electric potential, electric potential difference (voltage), and electromotive force.

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Wafer (electronics)

A wafer, also called a slice or substrate, is a thin slice of semiconductor material, such as a crystalline silicon, used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.

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The watt (symbol: W) is a unit of power.

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Work function

In solid-state physics, the work setting (sometimes spelled workfunction) is the minimum thermodynamic work (i.e. energy) needed to remove an electron from a solid to a point in the vacuum immediately outside the solid surface.

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X-rays make up X-radiation, a form of electromagnetic radiation.

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Zirconium is a chemical element with symbol Zr and atomic number 40.

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45 nanometer

Per the International Technology Roadmap for Semiconductors, the 45 nanometer (45 nm) technology node should refer to the average half-pitch of a memory cell manufactured at around the 2007–2008 time frame.

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65-nanometer process

The 65-nanometer (65 nm) process is advanced lithographic node used in volume CMOS semiconductor fabrication.

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Redirects here:

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[1] https://en.wikipedia.org/wiki/MOSFET

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