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42 relations: An Wang, Bipolar junction transistor, Bit, Bubble memory, Cambridge University Press, Capacitor, Combinational logic, Computer, Computer memory, CPU cache, Digital electronics, Dynamic random-access memory, Electronic circuit, Ferrite (magnet), Field-effect transistor, Flip-flop (electronics), Frederic Calland Williams, Integrated circuit, Intel, Intel 1103, Jay Wright Forrester, Ken Olsen, Logic gate, Magnetic-core memory, Magnetism, Mebibit, Microprocessor, MIT Press, MOS Technology, MOSFET, NAND gate, NOR gate, Parasitic capacitance, Power inverter, Random-access memory, Row hammer, Schottky transistor, Semiconductor device, Sequential logic, Static random-access memory, Transistor–transistor logic, Williams tube.
An Wang
An Wang (February 7, 1920 – March 24, 1990) was a Chinese–American computer engineer and inventor, and co-founder of computer company Wang Laboratories, which was known primarily for its dedicated word processing machines.
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Bipolar junction transistor
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Bit
The bit (a portmanteau of binary digit) is a basic unit of information used in computing and digital communications.
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Bubble memory
Bubble memory is a type of non-volatile computer memory that uses a thin film of a magnetic material to hold small magnetized areas, known as bubbles or domains, each storing one bit of data.
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Cambridge University Press
Cambridge University Press (CUP) is the publishing business of the University of Cambridge.
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Capacitor
A capacitor is a passive two-terminal electrical component that stores potential energy in an electric field.
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Combinational logic
In digital circuit theory, combinational logic (sometimes also referred to as time-independent logic) is a type of digital logic which is implemented by Boolean circuits, where the output is a pure function of the present input only.
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Computer
A computer is a device that can be instructed to carry out sequences of arithmetic or logical operations automatically via computer programming.
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Computer memory
In computing, memory refers to the computer hardware integrated circuits that store information for immediate use in a computer; it is synonymous with the term "primary storage".
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CPU cache
A CPU cache is a hardware cache used by the central processing unit (CPU) of a computer to reduce the average cost (time or energy) to access data from the main memory.
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Digital electronics
Digital electronics or digital (electronic) circuits are electronics that operate on digital signals.
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Dynamic random-access memory
Dynamic random-access memory (DRAM) is a type of random access semiconductor memory that stores each bit of data in a separate tiny capacitor within an integrated circuit.
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Electronic circuit
An electronic circuit is composed of individual electronic components, such as resistors, transistors, capacitors, inductors and diodes, connected by conductive wires or traces through which electric current can flow.
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Ferrite (magnet)
A ferrite is a ceramic material made by mixing and firing large proportions iron(III) oxide (Fe2O3, rust) blended with small proportions of one or more additional metallic elements, such as barium, manganese, nickel, and zinc.
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Field-effect transistor
The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device.
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Flip-flop (electronics)
In electronics, a flip-flop or latch is a circuit that has two stable states and can be used to store state information.
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Frederic Calland Williams
Sir Frederic Calland Williams, (26 June 1911 – 11 August 1977), known as F.C. Williams or Freddie Williams, was an English engineer, a pioneer in radar and computer technology.
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Integrated circuit
An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, normally silicon.
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Intel
Intel Corporation (stylized as intel) is an American multinational corporation and technology company headquartered in Santa Clara, California, in the Silicon Valley.
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Intel 1103
The 1103 is a dynamic random-access memory (DRAM) integrated circuit (IC) developed and fabricated by Intel.
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Jay Wright Forrester
Jay Wright Forrester (July 14, 1918 – November 16, 2016) was a pioneering American computer engineer and systems scientist.
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Ken Olsen
Kenneth Harry "Ken" Olsen (February 20, 1926 – February 6, 2011) was an American engineer who co-founded Digital Equipment Corporation (DEC) in 1957 with colleague Harlan Anderson and his brother Stan Olsen.
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Logic gate
In electronics, a logic gate is an idealized or physical device implementing a Boolean function; that is, it performs a logical operation on one or more binary inputs and produces a single binary output.
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Magnetic-core memory
Magnetic-core memory was the predominant form of random-access computer memory for 20 years between about 1955 and 1975.
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Magnetism
Magnetism is a class of physical phenomena that are mediated by magnetic fields.
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Mebibit
The mebibit is a multiple of the bit, a unit of information, prefixed by the standards-based multiplier "mebi" (symbol Mi), a binary prefix meaning 220.
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Microprocessor
A microprocessor is a computer processor that incorporates the functions of a central processing unit on a single integrated circuit (IC), or at most a few integrated circuits.
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MIT Press
The MIT Press is a university press affiliated with the Massachusetts Institute of Technology (MIT) in Cambridge, Massachusetts (United States).
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MOS Technology
MOS Technology, Inc. ("MOS" being short for Metal Oxide Semiconductor), also known as CSG (Commodore Semiconductor Group), was a semiconductor design and fabrication company based in Norristown, Pennsylvania, in the United States.
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MOSFET
MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.
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NAND gate
In digital electronics, a NAND gate (NOT-AND) is a logic gate which produces an output which is false only if all its inputs are true; thus its output is complement to that of an AND gate.
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NOR gate
The NOR gate is a digital logic gate that implements logical NOR - it behaves according to the truth table to the right.
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Parasitic capacitance
Parasitic capacitance, or stray capacitance is an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other.
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Power inverter
A power inverter, or inverter, is an electronic device or circuitry that changes direct current (DC) to alternating current (AC).
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Random-access memory
Random-access memory (RAM) is a form of computer data storage that stores data and machine code currently being used.
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Row hammer
Row hammer (also written as rowhammer) is an unintended side effect in dynamic random-access memory (DRAM) that causes memory cells to leak their charges and interact electrically between themselves, possibly leaking the contents of nearby memory rows that were not addressed in the original memory access.
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Schottky transistor
A Schottky transistor is a combination of a transistor and a Schottky diode that prevents the transistor from saturating by diverting the excessive input current.
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Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors.
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Sequential logic
In digital circuit theory, sequential logic is a type of logic circuit whose output depends not only on the present value of its input signals but on the sequence of past inputs, the input history.
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Static random-access memory
Static random-access memory (static RAM or SRAM) is a type of semiconductor memory that uses bistable latching circuitry (flip-flop) to store each bit.
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Transistor–transistor logic
Transistor–transistor logic (TTL) is a logic family built from bipolar junction transistors.
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Williams tube
The Williams tube, or the Williams–Kilburn tube after inventors Freddie Williams (26 June 1911 – 11 August 1977), and Tom Kilburn (11 August 1921 – 17 January 2001), is an early form of computer memory.
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1 bit memory cell, Binary cell, DRAM cell, Memory cell (binary), Memory cell (computers), SRAM cell.
References
[1] https://en.wikipedia.org/wiki/Memory_cell_(computing)
