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15 relations: Device under test, Electromagnetic induction, Electromechanics, Field-effect transistor, Gallium arsenide, High frequency, Insertion loss, Microwave, MOSFET, PIN diode, Radio frequency, Solid-state relay, Standing wave ratio, Switch, Transfer switch.
Device under test
A device under test (DUT), also known as equipment under test (EUT) and unit under test (UUT), is a manufactured product undergoing testing, either at first manufacture or later during its life cycle as part of ongoing functional testing and calibration checks.
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Electromagnetic induction
Electromagnetic or magnetic induction is the production of an electromotive force (i.e., voltage) across an electrical conductor in a changing magnetic field.
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Electromechanics
In engineering, electromechanics combines processes and procedures drawn from electrical engineering and mechanical engineering.
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Field-effect transistor
The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device.
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Gallium arsenide
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
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High frequency
High frequency (HF) is the ITU designation for the range of radio frequency electromagnetic waves (radio waves) between 3 and 30 megahertz (MHz).
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Insertion loss
In telecommunications, insertion loss is the loss of signal power resulting from the insertion of a device in a transmission line or optical fiber and is usually expressed in decibels (dB).
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Microwave
Microwaves are a form of electromagnetic radiation with wavelengths ranging from one meter to one millimeter; with frequencies between and.
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MOSFET
MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.
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PIN diode
A PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region.
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Radio frequency
Radio frequency (RF) refers to oscillatory change in voltage or current in a circuit, waveguide or transmission line in the range extending from around twenty thousand times per second to around three hundred billion times per second, roughly between the upper limit of audio and the lower limit of infrared.
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Solid-state relay
A solid-state relay (SSR) is an electronic switching device that switches on or off when a small external voltage is applied across its control terminals.
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Standing wave ratio
In radio engineering and telecommunications, standing wave ratio (SWR) is a measure of impedance matching of loads to the characteristic impedance of a transmission line or waveguide.
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Switch
In electrical engineering, a switch is an electrical component that can "make" or "break" an electrical circuit, interrupting the current or diverting it from one conductor to another.
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Transfer switch
A transfer switch is an electrical switch that switches a load between two sources.
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