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Silicon on insulator

Index Silicon on insulator

Silicon on insulator (SOI) technology refers to the use of a layered silicon–insulator–silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance, thereby improving performance. [1]

40 relations: Advanced Micro Devices, Chartered Semiconductor Manufacturing, CMOS, Coating, FinFET, Floating body effect, Freescale Semiconductor, Germanium, High-κ dielectric, IBM, IC power-supply pin, Intel, Intel TeraHertz, Ion implantation, Journal of Applied Physics, Latch-up, Metrology, Moore's law, MOSFET, Multigate device, Parasitic capacitance, Peregrine Semiconductor, PlayStation 3, Power Architecture, PowerPC, Sapphire, Semiconductor, Silicon, Silicon dioxide, Silicon on sapphire, Silicon photonics, Smart cut, Soitec, Static random-access memory, Strain engineering, TSMC, Wafer (electronics), Wafer bonding, Wii, Xbox 360.

Advanced Micro Devices

Advanced Micro Devices, Inc. (AMD) is an American multinational semiconductor company based in Santa Clara, California, that develops computer processors and related technologies for business and consumer markets.

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Chartered Semiconductor Manufacturing

Chartered Semiconductor was created in 1987, as a venture that included Singapore Technologies Engineering Ltd. Yet, it was not until 2000, that ST Engineering (Singapore Technologies Semiconductors), a wholly owned subsidiary of Temasek Holdings wholly acquired Chartered.

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CMOS

Complementary metal–oxide–semiconductor, abbreviated as CMOS, is a technology for constructing integrated circuits.

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Coating

A coating is a covering that is applied to the surface of an object, usually referred to as the substrate.

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FinFET

A Fin Field-effect transistor (FinFET) is a MOSFET tri-gate transistor built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure.

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Floating body effect

The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes.

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Freescale Semiconductor

Freescale Semiconductor, Inc. was an American multinational corporation headquartered in Austin, Texas, with design, research and development, manufacturing and sales operations in more than 75 locations in 19 countries.

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Germanium

Germanium is a chemical element with symbol Ge and atomic number 32.

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High-κ dielectric

The term high-κ dielectric refers to a material with a high dielectric constant κ (as compared to silicon dioxide).

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IBM

The International Business Machines Corporation (IBM) is an American multinational technology company headquartered in Armonk, New York, United States, with operations in over 170 countries.

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IC power-supply pin

Almost all integrated circuits (ICs) have at least two pins that connect to the power rails of the circuit in which they are installed.

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Intel

Intel Corporation (stylized as intel) is an American multinational corporation and technology company headquartered in Santa Clara, California, in the Silicon Valley.

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Intel TeraHertz

Intel TeraHertz was Intel's new design for transistors.

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Ion implantation

Ion implantation is low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target.

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Journal of Applied Physics

The Journal of Applied Physics is a peer-reviewed scientific journal with a focus on the physics of modern technology.

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Latch-up

A latch-up is a type of short circuit which can occur in an integrated circuit (IC).

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Metrology

Metrology is the science of measurement.

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Moore's law

Moore's law is the observation that the number of transistors in a dense integrated circuit doubles about every two years.

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MOSFET

MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.

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Multigate device

A multigate device or multiple-gate field-effect transistor (MuGFET) refers to a MOSFET (metal–oxide–semiconductor field-effect transistor) that incorporates more than one gate into a single device.

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Parasitic capacitance

Parasitic capacitance, or stray capacitance is an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other.

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Peregrine Semiconductor

Peregrine Semiconductor is a San Diego-based manufacturer of high-performance RF (radio frequency) CMOS integrated circuits.

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PlayStation 3

The PlayStation 3 (PS3) is a home video game console developed by Sony Computer Entertainment.

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Power Architecture

Power Architecture is a registered trademark for similar reduced instruction set computing (RISC) instruction sets for microprocessors developed and manufactured by such companies as IBM, Freescale/NXP, AppliedMicro, LSI, Teledyne e2v and Synopsys.

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PowerPC

PowerPC (with the backronym Performance Optimization With Enhanced RISC – Performance Computing, sometimes abbreviated as PPC) is a reduced instruction set computing (RISC) instruction set architecture (ISA) created by the 1991 Apple–IBM–Motorola alliance, known as AIM.

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Sapphire

Sapphire is a precious gemstone, a variety of the mineral corundum, an aluminium oxide.

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Semiconductor

A semiconductor material has an electrical conductivity value falling between that of a conductor – such as copper, gold etc.

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Silicon

Silicon is a chemical element with symbol Si and atomic number 14.

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Silicon dioxide

Silicon dioxide, also known as silica (from the Latin silex), is an oxide of silicon with the chemical formula, most commonly found in nature as quartz and in various living organisms.

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Silicon on sapphire

Silicon on sapphire (SOS) is a hetero-epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 µm) of silicon grown on a sapphire (Al2O3) wafer.

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Silicon photonics

Silicon photonics is the study and application of photonic systems which use silicon as an optical medium.

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Smart cut

Smart cut is a technological process that enables the transfer of very fine layers of crystalline silicon material onto a mechanical support.

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Soitec

Soitec is a France-based international industrial company specialized in generating and manufacturing high performance semiconductor materials.

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Static random-access memory

Static random-access memory (static RAM or SRAM) is a type of semiconductor memory that uses bistable latching circuitry (flip-flop) to store each bit.

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Strain engineering

Strain engineering refers to a general strategy employed in semiconductor manufacturing to enhance device performance.

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TSMC

Taiwan Semiconductor Manufacturing Company, Limited (TSMC), also known as Taiwan Semiconductor, is the world's largest dedicated independent (pure-play) semiconductor foundry, with its headquarters and main operations located in the Hsinchu Science and Industrial Park in Hsinchu, Taiwan.

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Wafer (electronics)

A wafer, also called a slice or substrate, is a thin slice of semiconductor material, such as a crystalline silicon, used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.

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Wafer bonding

Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation.

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Wii

The Wii is a home video game console released by Nintendo on November 19, 2006.

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Xbox 360

The Xbox 360 is a home video game console developed by Microsoft.

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References

[1] https://en.wikipedia.org/wiki/Silicon_on_insulator

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