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14 relations: Boltzmann constant, Channel length modulation, Depletion region, Drain-induced barrier lowering, Electric current, Elementary charge, Extrinsic semiconductor, Field-effect transistor, JFET, MOSFET, Permittivity, Random dopant fluctuation, Subthreshold conduction, 90 nanometer.
Boltzmann constant
The Boltzmann constant, which is named after Ludwig Boltzmann, is a physical constant relating the average kinetic energy of particles in a gas with the temperature of the gas.
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Channel length modulation
One of several short-channel effects in MOSFET scaling, channel length modulation (CLM) is a shortening of the length of the inverted channel region with increase in drain bias for large drain biases.
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Depletion region
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field.
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Drain-induced barrier lowering
Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages.
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Electric current
An electric current is a flow of electric charge.
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Elementary charge
The elementary charge, usually denoted as or sometimes, is the electric charge carried by a single proton, or equivalently, the magnitude of the electric charge carried by a single electron, which has charge.
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Extrinsic semiconductor
An extrinsic semiconductor is one that has been doped, that is, into which a doping agent has been introduced, giving it different electrical properties than the intrinsic (pure) semiconductor.
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Field-effect transistor
The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device.
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JFET
The junction gate field-effect transistor (JFET or JUGFET) is the simplest type of field-effect transistor.
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MOSFET
MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.
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Permittivity
In electromagnetism, absolute permittivity, often simply called permittivity, usually denoted by the Greek letter ε (epsilon), is the measure of resistance that is encountered when forming an electric field in a particular medium.
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Random dopant fluctuation
Random dopant fluctuation (RDF) is a form of process variation resulting from variation in the implanted impurity concentration.
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Subthreshold conduction
Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.
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90 nanometer
The 90 nanometer (90 nm) process refers to the level of CMOS process technology that was reached in the 2004–2005 timeframe, by most leading semiconductor companies, like Intel, AMD, Infineon, Texas Instruments, IBM, and TSMC.
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