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14 relations: Ceramic, Copper, Diffusion barrier, Electric light, Microelectronics, Nitride, Silicon, Titanium nitride, Tungsten, Tungsten disilicide, Tungsten pentoxide, Tungsten trioxide, Tungsten(IV) oxide, Wire bonding.
Ceramic
A ceramic is a non-metallic solid material comprising an inorganic compound of metal, non-metal or metalloid atoms primarily held in ionic and covalent bonds.
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Copper
Copper is a chemical element with symbol Cu (from cuprum) and atomic number 29.
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Diffusion barrier
A diffusion barrier is a thin layer (usually micrometres thick) of metal usually placed between two other metals.
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Electric light
An electric light is a device that produces visible light from electric current.
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Microelectronics
Microelectronics is a subfield of electronics.
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Nitride
In chemistry, a nitride is a compound of nitrogen where nitrogen has a formal oxidation state of 3-.
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Silicon
Silicon is a chemical element with symbol Si and atomic number 14.
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Titanium nitride
Titanium nitride (sometimes known as tinite) is an extremely hard ceramic material, often used as a coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties.
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Tungsten
Tungsten, or wolfram, is a chemical element with symbol W (referring to wolfram) and atomic number 74.
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Tungsten disilicide
Tungsten silicide (WSi2) is an inorganic compound, a silicide of tungsten.
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Tungsten pentoxide
Tungsten pentoxide was reported in early literature but proved to have the stoichiometry W18O49.
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Tungsten trioxide
Tungsten(VI) oxide, also known as tungsten trioxide or tungstic anhydride, WO3, is a chemical compound containing oxygen and the transition metal tungsten.
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Tungsten(IV) oxide
Tungsten dioxide is the chemical compound with the formula WO2.
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Wire bonding
Wire bonding is the method of making interconnections (ATJ) between an integrated circuit (IC) or other semiconductor device and its packaging during semiconductor device fabrication.
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