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34 relations: Anode, BC548, Capacitance, Capacitor, Cathode, CMOS, Depletion region, Diode, Electronics, Ferroelectric capacitor, Frequency modulation, Frequency multiplier, Frequency synthesizer, Heterostructure barrier varactor, LC circuit, Local oscillator, Mobile phone, Monolithic microwave integrated circuit, MOSFET, Oxford University Press, Parametric oscillator, Passivity (engineering), P–n junction, Phase-locked loop, Q factor, Saturable reactor, Schottky diode, Spectrum analyzer, Square root, Television set, Variable capacitor, Voltage-controlled oscillator, 1N400x general-purpose diodes, 2N2222.
Anode
An anode is an electrode through which the conventional current enters into a polarized electrical device.
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BC548
The BC548 is a general-purpose NPN bipolar junction transistor commonly used in European and American electronic equipment.
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Capacitance
Capacitance is the ratio of the change in an electric charge in a system to the corresponding change in its electric potential.
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Capacitor
A capacitor is a passive two-terminal electrical component that stores potential energy in an electric field.
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Cathode
A cathode is the electrode from which a conventional current leaves a polarized electrical device.
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CMOS
Complementary metal–oxide–semiconductor, abbreviated as CMOS, is a technology for constructing integrated circuits.
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Depletion region
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field.
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Diode
A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other.
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Electronics
Electronics is the discipline dealing with the development and application of devices and systems involving the flow of electrons in a vacuum, in gaseous media, and in semiconductors.
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Ferroelectric capacitor
Ferroelectric capacitor is a capacitor based on a ferroelectric material.
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Frequency modulation
In telecommunications and signal processing, frequency modulation (FM) is the encoding of information in a carrier wave by varying the instantaneous frequency of the wave.
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Frequency multiplier
In electronics, a frequency multiplier is an electronic circuit that generates an output signal whose output frequency is a harmonic (multiple) of its input frequency.
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Frequency synthesizer
A frequency synthesizer is an electronic circuit that generates a range of frequencies from a single reference frequency.
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Heterostructure barrier varactor
The heterostructure barrier varactor (HBV) is a semiconductor device which shows a variable capacitance with voltage bias, similar to a varactor diode.
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LC circuit
An LC circuit, also called a resonant circuit, tank circuit, or tuned circuit, is an electric circuit consisting of an inductor, represented by the letter L, and a capacitor, represented by the letter C, connected together.
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Local oscillator
In electronics, a local oscillator (LO) is an electronic oscillator used with a mixer to change the frequency of a signal.
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Mobile phone
A mobile phone, known as a cell phone in North America, is a portable telephone that can make and receive calls over a radio frequency link while the user is moving within a telephone service area.
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Monolithic microwave integrated circuit
A Monolithic Microwave Integrated Circuit, or MMIC (sometimes pronounced "mimic"), is a type of integrated circuit (IC) device that operates at microwave frequencies (300 MHz to 300 GHz).
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MOSFET
MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.
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Oxford University Press
Oxford University Press (OUP) is the largest university press in the world, and the second oldest after Cambridge University Press.
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Parametric oscillator
A parametric oscillator is a driven harmonic oscillator in which the oscillations are driven by varying some parameter of the system at some frequency, typically different from the natural frequency of the oscillator.
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Passivity (engineering)
Passivity is a property of engineering systems, used in a variety of engineering disciplines, but most commonly found in analog electronics and control systems.
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P–n junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor.
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Phase-locked loop
A phase-locked loop or phase lock loop abbreviated as PLL is a control system that generates an output signal whose phase is related to the phase of an input signal.
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Q factor
In physics and engineering the quality factor or Q factor is a dimensionless parameter that describes how underdamped an oscillator or resonator is, and characterizes a resonator's bandwidth relative to its centre frequency.
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Saturable reactor
A saturable reactor in electrical engineering is a special form of inductor where the magnetic core can be deliberately saturated by a direct electric current in a control winding.
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Schottky diode
The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal.
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Spectrum analyzer
A spectrum analyzer measures the magnitude of an input signal versus frequency within the full frequency range of the instrument.
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Square root
In mathematics, a square root of a number a is a number y such that; in other words, a number y whose square (the result of multiplying the number by itself, or) is a. For example, 4 and −4 are square roots of 16 because.
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Television set
A television set or television receiver, more commonly called a television, TV, TV set, or telly, is a device that combines a tuner, display, and loudspeakers for the purpose of viewing television.
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Variable capacitor
A variable capacitor is a capacitor whose capacitance may be intentionally and repeatedly changed mechanically or electronically.
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Voltage-controlled oscillator
A microwave (12–18nbspGHz) voltage-controlled oscillator A voltage-controlled oscillator (VCO) is an electronic oscillator whose oscillation frequency is controlled by a voltage input.
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1N400x general-purpose diodes
The 1N400x (or 1N4001 or 1N4000) series is a family of popular 1 A general-purpose silicon rectifier diodes commonly used in AC adapters for common household appliances.
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2N2222
The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications.
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Capacitance diode, Tuning diode, Varactor, Varactor diode, Variable capacitance diode, Varicap diode.
References
[1] https://en.wikipedia.org/wiki/Varicap
