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2N7000 and Transistor

Shortcuts: Differences, Similarities, Jaccard Similarity Coefficient, References.

Difference between 2N7000 and Transistor

2N7000 vs. Transistor

The 2N7000 and BS170 are two different N-channel, enhancement-mode MOSFETs used for low-power switching applications, with different lead arrangements and current ratings. A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

Similarities between 2N7000 and Transistor

2N7000 and Transistor have 6 things in common (in Unionpedia): Bipolar junction transistor, Darlington transistor, Diode, MOSFET, Surface-mount technology, Transistor.

Bipolar junction transistor

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2N7000 and Bipolar junction transistor · Bipolar junction transistor and Transistor · See more »

Darlington transistor

In electronics, the Darlington transistor (commonly called a Darlington pair) is a compound structure of a particular design made by two bipolar transistors connected in such a way that the current amplified by the first transistor is amplified further by the second one.

2N7000 and Darlington transistor · Darlington transistor and Transistor · See more »

Diode

A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other.

2N7000 and Diode · Diode and Transistor · See more »

MOSFET

MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.

2N7000 and MOSFET · MOSFET and Transistor · See more »

Surface-mount technology

Surface-mount technology (SMT) is a method for producing electronic circuits in which the components are mounted or placed directly onto the surface of printed circuit boards (PCBs).

2N7000 and Surface-mount technology · Surface-mount technology and Transistor · See more »

Transistor

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

2N7000 and Transistor · Transistor and Transistor · See more »

The list above answers the following questions

2N7000 and Transistor Comparison

2N7000 has 12 relations, while Transistor has 197. As they have in common 6, the Jaccard index is 2.87% = 6 / (12 + 197).

References

This article shows the relationship between 2N7000 and Transistor. To access each article from which the information was extracted, please visit:

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