Active pixel sensor and Live MOS

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Difference between Active pixel sensor and Live MOS

Active pixel sensor vs. Live MOS

An active-pixel sensor (APS) is an image sensor where each picture element ("pixel") has a photodetector and an active amplifier. The Live MOS sensor is a brand name of an NMOS Image sensor Dpreview used by Panasonic, Olympus and Leica in their Four Thirds System DSLR manufactured since 2006.

Charge-coupled device

A charge-coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for example conversion into a digital value.

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Digital single-lens reflex camera

A digital single-lens reflex camera (also called digital SLR or DSLR) is a digital camera that combines the optics and the mechanisms of a single-lens reflex camera with a digital imaging sensor, as opposed to photographic film.

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Image noise

Image noise is random variation of brightness or color information in images, and is usually an aspect of electronic noise.

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Image sensor

An image sensor or imaging sensor is a sensor that detects and conveys the information that constitutes an image.

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MOSFET

MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.

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Olympus Corporation

is a Japanese manufacturer of optics and reprography products.

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