CMOS and PMOS logic

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Difference between CMOS and PMOS logic

CMOS vs. PMOS logic

Complementary metal–oxide–semiconductor, abbreviated as CMOS, is a technology for constructing integrated circuits. P-type metal-oxide-semiconductor logic uses p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits.

De Morgan's laws

In propositional logic and boolean algebra, De Morgan's laws are a pair of transformation rules that are both valid rules of inference.

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Extrinsic semiconductor

An extrinsic semiconductor is one that has been doped, that is, into which a doping agent has been introduced, giving it different electrical properties than the intrinsic (pure) semiconductor.

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Logic gate

In electronics, a logic gate is an idealized or physical device implementing a Boolean function; that is, it performs a logical operation on one or more binary inputs and produces a single binary output.

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Metal gate

A metal gate, in the context of a lateral Metal-Oxide-Semiconductor MOS stack, is just that—the gate material is made from a metal.

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MOSFET

MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.

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NMOS logic

N-type metal-oxide-semiconductor logic uses n-type field-effect transistors (MOSFETs) to implement logic gates and other digital circuits.

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Polycrystalline silicon

Polycrystalline silicon, also called polysilicon or poly-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry.

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Transistor–transistor logic

Transistor–transistor logic (TTL) is a logic family built from bipolar junction transistors.

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