Carbon nanotube field-effect transistor and Transistor

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Difference between Carbon nanotube field-effect transistor and Transistor

Carbon nanotube field-effect transistor vs. Transistor

A carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure. A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

Electron mobility

In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field.

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Field-effect transistor

The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device.

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Moore's law

Moore's law is the observation that the number of transistors in a dense integrated circuit doubles about every two years.

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MOSFET

MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.

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Silicon

Silicon is a chemical element with symbol Si and atomic number 14.

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Transconductance

Transconductance (for transfer conductance), also infrequently called mutual conductance, is the electrical characteristic relating the current through the output of a device to the voltage across the input of a device.

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