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Charge trap flash and Flash memory

Shortcuts: Differences, Similarities, Jaccard Similarity Coefficient, References.

Difference between Charge trap flash and Flash memory

Charge trap flash vs. Flash memory

Charge Trap Flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. Flash memory is an electronic (solid-state) non-volatile computer storage medium that can be electrically erased and reprogrammed.

Similarities between Charge trap flash and Flash memory

Charge trap flash and Flash memory have 11 things in common (in Unionpedia): EEPROM, EPROM, Floating-gate MOSFET, Hot-carrier injection, Intel, International Technology Roadmap for Semiconductors, Multi-level cell, Samsung Electronics, Silicon nitride, SONOS, Spansion.

EEPROM

EEPROM (also E2PROM) stands for Electrically Erasable Programmable Read-Only Memory and is a type of non-volatile memory used in computers, integrated in microcontrollers for smart cards and remote keyless system, and other electronic devices to store relatively small amounts of data but allowing individual bytes to be erased and reprogrammed.

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EPROM

An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of memory chip that retains its data when its power supply is switched off.

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Floating-gate MOSFET

The floating-gate MOSFET (FGMOS) is a field-effect transistor, whose structure is similar to a conventional MOSFET.

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Hot-carrier injection

Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state.

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Intel

Intel Corporation (stylized as intel) is an American multinational corporation and technology company headquartered in Santa Clara, California, in the Silicon Valley.

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International Technology Roadmap for Semiconductors

The International Technology Roadmap for Semiconductors (ITRS) is a set of documents produced by a group of semiconductor industry experts.

Charge trap flash and International Technology Roadmap for Semiconductors · Flash memory and International Technology Roadmap for Semiconductors · See more »

Multi-level cell

In electronics, a multi-level cell (MLC) is a memory element capable of storing more than a single bit of information, compared to a single-level cell (SLC) which can store only one bit per memory element.

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Samsung Electronics

Samsung Electronics Co., Ltd. (Korean: 삼성전자; Hanja: 三星電子 (Literally "tristar electronics")) is a South Korean multinational electronics company headquartered in Suwon, South Korea. Through having an extremely complicated ownership structure with some circular ownership, it is the flagship company of the Samsung Group, accounting for 70% of the group's revenue in 2012. Samsung Electronics has assembly plants and sales networks in 80 countries and employs around 308,745 people. It is the world's largest information technology company, consumer electronics maker and chipmaker by revenue. As of October 2017, Samsung Electronics' market cap stood at US$372.0 billion. Samsung has long been a major manufacturer of electronic components such as lithium-ion batteries, semiconductors, chips, flash memory and hard drive devices for clients such as Apple, Sony, HTC and Nokia. It is the world's largest manufacturer of mobile phones and smartphones, started with the original Samsung Solstice and later fueled by the popularity of its Samsung Galaxy line of devices. The company is also a major vendor of tablet computers, particularly its Android-powered Samsung Galaxy Tab collection, and is generally regarded as pioneering the phablet market through the Samsung Galaxy Note family of devices. Samsung has been the world's largest television manufacturer since 2006, and the world's largest manufacturer of mobile phones since 2011. It is also the world's largest memory chips manufacturer. In July 2017, Samsung Electronics overtook Intel as the largest semiconductor chip maker in the world. Samsung, like many other South Korean family-run chaebols, has been criticized for low dividend payouts and other governance practices that favor controlling shareholders at the expense of ordinary investors. In 2012, Kwon Oh-hyun was appointed the company's CEO but announced in October 2017 that he would resign in March 2018, citing an "unprecedented crisis".

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Silicon nitride

Silicon nitride is a chemical compound of the elements silicon and nitrogen.

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SONOS

SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"siicon dioxide"—"silicon", is a cross sectional structure of MOSFET, realized in late 70's.

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Spansion

Spansion Inc. was an American-based company that designed, developed, and manufactured flash memory, microcontrollers, mixed-signal and analog products, as well as system-on-chip (SoC) solutions.

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The list above answers the following questions

Charge trap flash and Flash memory Comparison

Charge trap flash has 22 relations, while Flash memory has 159. As they have in common 11, the Jaccard index is 6.08% = 11 / (22 + 159).

References

This article shows the relationship between Charge trap flash and Flash memory. To access each article from which the information was extracted, please visit:

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