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Diode and IMPATT diode

Shortcuts: Differences, Similarities, Jaccard Similarity Coefficient, References.

Difference between Diode and IMPATT diode

Diode vs. IMPATT diode

A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other. An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices.

Similarities between Diode and IMPATT diode

Diode and IMPATT diode have 11 things in common (in Unionpedia): Avalanche breakdown, Bell Labs, Doping (semiconductor), Electronic oscillator, Gunn diode, Microwave, Negative resistance, P–n junction, Semiconductor, Semiconductor device, Tunnel diode.

Avalanche breakdown

Avalanche breakdown is a phenomenon that can occur in both insulating and semiconducting materials.

Avalanche breakdown and Diode · Avalanche breakdown and IMPATT diode · See more »

Bell Labs

Nokia Bell Labs (formerly named AT&T Bell Laboratories, Bell Telephone Laboratories and Bell Labs) is an American research and scientific development company, owned by Finnish company Nokia.

Bell Labs and Diode · Bell Labs and IMPATT diode · See more »

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical properties.

Diode and Doping (semiconductor) · Doping (semiconductor) and IMPATT diode · See more »

Electronic oscillator

An electronic oscillator is an electronic circuit that produces a periodic, oscillating electronic signal, often a sine wave or a square wave.

Diode and Electronic oscillator · Electronic oscillator and IMPATT diode · See more »

Gunn diode

A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a two-terminal passive semiconductor electronic component, with negative resistance, used in high-frequency electronics.

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Microwave

Microwaves are a form of electromagnetic radiation with wavelengths ranging from one meter to one millimeter; with frequencies between and.

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Negative resistance

In electronics, negative resistance (NR) is a property of some electrical circuits and devices in which an increase in voltage across the device's terminals results in a decrease in electric current through it.

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P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor.

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Semiconductor

A semiconductor material has an electrical conductivity value falling between that of a conductor – such as copper, gold etc.

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Semiconductor device

Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors.

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Tunnel diode

A tunnel diode or Esaki diode is a type of semiconductor that is capable of very fast operation, well into the microwave frequency region (up to), made possible by the use of the quantum mechanical effect called tunneling.

Diode and Tunnel diode · IMPATT diode and Tunnel diode · See more »

The list above answers the following questions

Diode and IMPATT diode Comparison

Diode has 213 relations, while IMPATT diode has 22. As they have in common 11, the Jaccard index is 4.68% = 11 / (213 + 22).

References

This article shows the relationship between Diode and IMPATT diode. To access each article from which the information was extracted, please visit:

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