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Dynamic random-access memory and Magnetic-core memory

Shortcuts: Differences, Similarities, Jaccard Similarity Coefficient, References.

Difference between Dynamic random-access memory and Magnetic-core memory

Dynamic random-access memory vs. Magnetic-core memory

Dynamic random-access memory (DRAM) is a type of random access semiconductor memory that stores each bit of data in a separate tiny capacitor within an integrated circuit. Magnetic-core memory was the predominant form of random-access computer memory for 20 years between about 1955 and 1975.

Similarities between Dynamic random-access memory and Magnetic-core memory

Dynamic random-access memory and Magnetic-core memory have 14 things in common (in Unionpedia): Areal density (computer storage), Bit, Computer data storage, Dynamic random-access memory, IBM, Integrated circuit, Intel 1103, Non-volatile memory, Random-access memory, Selectron tube, Semiconductor memory, Static random-access memory, Transistor, Williams tube.

Areal density (computer storage)

Areal density is a measure of the quantity of information bits that can be stored on a given length of track, area of surface, or in a given volume of a computer storage medium.

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Bit

The bit (a portmanteau of binary digit) is a basic unit of information used in computing and digital communications.

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Computer data storage

Computer data storage, often called storage or memory, is a technology consisting of computer components and recording media that are used to retain digital data.

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Dynamic random-access memory

Dynamic random-access memory (DRAM) is a type of random access semiconductor memory that stores each bit of data in a separate tiny capacitor within an integrated circuit.

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IBM

The International Business Machines Corporation (IBM) is an American multinational technology company headquartered in Armonk, New York, United States, with operations in over 170 countries.

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Integrated circuit

An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, normally silicon.

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Intel 1103

The 1103 is a dynamic random-access memory (DRAM) integrated circuit (IC) developed and fabricated by Intel.

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Non-volatile memory

Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retrieve stored information even after having been power cycled.

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Random-access memory

Random-access memory (RAM) is a form of computer data storage that stores data and machine code currently being used.

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Selectron tube

The Selectron was an early form of digital computer memory developed by Jan A. Rajchman and his group at the Radio Corporation of America (RCA) under the direction of Vladimir K. Zworykin.

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Semiconductor memory

Semiconductor memory is a digital electronic data storage device, often used as computer memory, implemented with semiconductor electronic devices on an integrated circuit (IC).

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Static random-access memory

Static random-access memory (static RAM or SRAM) is a type of semiconductor memory that uses bistable latching circuitry (flip-flop) to store each bit.

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Transistor

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

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Williams tube

The Williams tube, or the Williams–Kilburn tube after inventors Freddie Williams (26 June 1911 – 11 August 1977), and Tom Kilburn (11 August 1921 – 17 January 2001), is an early form of computer memory.

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The list above answers the following questions

Dynamic random-access memory and Magnetic-core memory Comparison

Dynamic random-access memory has 120 relations, while Magnetic-core memory has 98. As they have in common 14, the Jaccard index is 6.42% = 14 / (120 + 98).

References

This article shows the relationship between Dynamic random-access memory and Magnetic-core memory. To access each article from which the information was extracted, please visit:

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