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Dynamic random-access memory and Solid-state drive

Shortcuts: Differences, Similarities, Jaccard Similarity Coefficient, References.

Difference between Dynamic random-access memory and Solid-state drive

Dynamic random-access memory vs. Solid-state drive

Dynamic random-access memory (DRAM) is a type of random access semiconductor memory that stores each bit of data in a separate tiny capacitor within an integrated circuit. A solid-state drive (SSD) is a solid-state storage device that uses integrated circuit assemblies as memory to store data persistently.

Similarities between Dynamic random-access memory and Solid-state drive

Dynamic random-access memory and Solid-state drive have 14 things in common (in Unionpedia): Apple Inc., Areal density (computer storage), Computer, Computer data storage, Dynamic random-access memory, Error correction code, Flash memory, Integrated circuit, Intel, JEDEC, Micron Technology, Non-volatile memory, Random-access memory, Volatile memory.

Apple Inc.

Apple Inc. is an American multinational technology company headquartered in Cupertino, California, that designs, develops, and sells consumer electronics, computer software, and online services.

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Areal density (computer storage)

Areal density is a measure of the quantity of information bits that can be stored on a given length of track, area of surface, or in a given volume of a computer storage medium.

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Computer

A computer is a device that can be instructed to carry out sequences of arithmetic or logical operations automatically via computer programming.

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Computer data storage

Computer data storage, often called storage or memory, is a technology consisting of computer components and recording media that are used to retain digital data.

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Dynamic random-access memory

Dynamic random-access memory (DRAM) is a type of random access semiconductor memory that stores each bit of data in a separate tiny capacitor within an integrated circuit.

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Error correction code

In computing, telecommunication, information theory, and coding theory, an error correction code, sometimes error correcting code, (ECC) is used for controlling errors in data over unreliable or noisy communication channels.

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Flash memory

Flash memory is an electronic (solid-state) non-volatile computer storage medium that can be electrically erased and reprogrammed.

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Integrated circuit

An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, normally silicon.

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Intel

Intel Corporation (stylized as intel) is an American multinational corporation and technology company headquartered in Santa Clara, California, in the Silicon Valley.

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JEDEC

The JEDEC Solid State Technology Association is an independent semiconductor engineering trade organization and standardization body.

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Micron Technology

Micron Technology, Inc. is an American global corporation based in Boise, Idaho.

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Non-volatile memory

Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retrieve stored information even after having been power cycled.

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Random-access memory

Random-access memory (RAM) is a form of computer data storage that stores data and machine code currently being used.

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Volatile memory

Volatile memory, in contrast to non-volatile memory, is computer memory that requires power to maintain the stored information; it retains its contents while powered on but when the power is interrupted, the stored data is quickly lost.

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The list above answers the following questions

Dynamic random-access memory and Solid-state drive Comparison

Dynamic random-access memory has 120 relations, while Solid-state drive has 213. As they have in common 14, the Jaccard index is 4.20% = 14 / (120 + 213).

References

This article shows the relationship between Dynamic random-access memory and Solid-state drive. To access each article from which the information was extracted, please visit:

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