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Flash memory and Low-power electronics

Shortcuts: Differences, Similarities, Jaccard Similarity Coefficient, References.

Difference between Flash memory and Low-power electronics

Flash memory vs. Low-power electronics

Flash memory is an electronic (solid-state) non-volatile computer storage medium that can be electrically erased and reprogrammed. Low-power electronics are electronics, such as notebook processors, that have been designed to use less electric power.

Similarities between Flash memory and Low-power electronics

Flash memory and Low-power electronics have 5 things in common (in Unionpedia): CMOS, Moore's law, MOSFET, Nanometre, Threshold voltage.

CMOS

Complementary metal–oxide–semiconductor, abbreviated as CMOS, is a technology for constructing integrated circuits.

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Moore's law

Moore's law is the observation that the number of transistors in a dense integrated circuit doubles about every two years.

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MOSFET

MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.

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Nanometre

The nanometre (International spelling as used by the International Bureau of Weights and Measures; SI symbol: nm) or nanometer (American spelling) is a unit of length in the metric system, equal to one billionth (short scale) of a metre (m).

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Threshold voltage

The threshold voltage, commonly abbreviated as Vth, of a field-effect transistor (FET) is the minimum gate-to-source voltage VGS (th) that is needed to create a conducting path between the source and drain terminals.

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The list above answers the following questions

Flash memory and Low-power electronics Comparison

Flash memory has 159 relations, while Low-power electronics has 75. As they have in common 5, the Jaccard index is 2.14% = 5 / (159 + 75).

References

This article shows the relationship between Flash memory and Low-power electronics. To access each article from which the information was extracted, please visit:

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