MOSFET and Saturation velocity

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Difference between MOSFET and Saturation velocity

MOSFET vs. Saturation velocity

MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. Saturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields.

Ballistic conduction

Ballistic conduction (ballistic transport) is the transport of electrons in a medium having negligible electrical resistivity caused by scattering.

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Electrical conductor

In physics and electrical engineering, a conductor is an object or type of material that allows the flow of an electrical current in one or more directions.

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Electron

The electron is a subatomic particle, symbol or, whose electric charge is negative one elementary charge.

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Field-effect transistor

The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device.

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Gallium arsenide

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

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Integrated circuit

An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, normally silicon.

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Microprocessor

A microprocessor is a computer processor that incorporates the functions of a central processing unit on a single integrated circuit (IC), or at most a few integrated circuits.

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Semiconductor

A semiconductor material has an electrical conductivity value falling between that of a conductor – such as copper, gold etc.

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Silicon

Silicon is a chemical element with symbol Si and atomic number 14.

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Transistor

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

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Valence and conduction bands

In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level and thus determine the electrical conductivity of the solid.

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