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P–n junction and Radiation hardening

Shortcuts: Differences, Similarities, Jaccard Similarity Coefficient, References.

Difference between P–n junction and Radiation hardening

P–n junction vs. Radiation hardening

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. Radiation hardening is the act of making electronic components and systems resistant to damage or malfunctions caused by ionizing radiation (particle radiation and high-energy electromagnetic radiation), such as those encountered in outer space and high-altitude flight, around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

Similarities between P–n junction and Radiation hardening

P–n junction and Radiation hardening have 10 things in common (in Unionpedia): Avalanche breakdown, Bipolar junction transistor, Charge carrier, Electron, Electron hole, Integrated circuit, Light-emitting diode, P–n junction, Semiconductor, Semiconductor device.

Avalanche breakdown

Avalanche breakdown is a phenomenon that can occur in both insulating and semiconducting materials.

Avalanche breakdown and P–n junction · Avalanche breakdown and Radiation hardening · See more »

Bipolar junction transistor

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Bipolar junction transistor and P–n junction · Bipolar junction transistor and Radiation hardening · See more »

Charge carrier

In physics, a charge carrier is a particle free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors.

Charge carrier and P–n junction · Charge carrier and Radiation hardening · See more »

Electron

The electron is a subatomic particle, symbol or, whose electric charge is negative one elementary charge.

Electron and P–n junction · Electron and Radiation hardening · See more »

Electron hole

In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice.

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Integrated circuit

An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, normally silicon.

Integrated circuit and P–n junction · Integrated circuit and Radiation hardening · See more »

Light-emitting diode

A light-emitting diode (LED) is a two-lead semiconductor light source.

Light-emitting diode and P–n junction · Light-emitting diode and Radiation hardening · See more »

P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor.

P–n junction and P–n junction · P–n junction and Radiation hardening · See more »

Semiconductor

A semiconductor material has an electrical conductivity value falling between that of a conductor – such as copper, gold etc.

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Semiconductor device

Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors.

P–n junction and Semiconductor device · Radiation hardening and Semiconductor device · See more »

The list above answers the following questions

P–n junction and Radiation hardening Comparison

P–n junction has 63 relations, while Radiation hardening has 185. As they have in common 10, the Jaccard index is 4.03% = 10 / (63 + 185).

References

This article shows the relationship between P–n junction and Radiation hardening. To access each article from which the information was extracted, please visit:

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