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P–n junction and Thyristor

Shortcuts: Differences, Similarities, Jaccard Similarity Coefficient, References.

Difference between P–n junction and Thyristor

P–n junction vs. Thyristor

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials.

Similarities between P–n junction and Thyristor

P–n junction and Thyristor have 16 things in common (in Unionpedia): Anode, Avalanche breakdown, Bell Labs, Bipolar junction transistor, Cathode, Charge carrier, Diode, Electron, Electron hole, Extrinsic semiconductor, Field-effect transistor, Ion implantation, P–n junction, Semiconductor device, Transistor, Zener diode.

Anode

An anode is an electrode through which the conventional current enters into a polarized electrical device.

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Avalanche breakdown

Avalanche breakdown is a phenomenon that can occur in both insulating and semiconducting materials.

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Bell Labs

Nokia Bell Labs (formerly named AT&T Bell Laboratories, Bell Telephone Laboratories and Bell Labs) is an American research and scientific development company, owned by Finnish company Nokia.

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Bipolar junction transistor

|- align.

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Cathode

A cathode is the electrode from which a conventional current leaves a polarized electrical device.

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Charge carrier

In physics, a charge carrier is a particle free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors.

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Diode

A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other.

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Electron

The electron is a subatomic particle, symbol or, whose electric charge is negative one elementary charge.

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Electron hole

In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice.

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Extrinsic semiconductor

An extrinsic semiconductor is one that has been doped, that is, into which a doping agent has been introduced, giving it different electrical properties than the intrinsic (pure) semiconductor.

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Field-effect transistor

The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device.

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Ion implantation

Ion implantation is low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target.

Ion implantation and P–n junction · Ion implantation and Thyristor · See more »

P–n junction

A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor.

P–n junction and P–n junction · P–n junction and Thyristor · See more »

Semiconductor device

Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors.

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Transistor

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

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Zener diode

A Zener diode is a particular type of diode that, unlike a normal one, allows current to flow not only from its anode to its cathode, but also in the reverse direction, when the Zener voltage is reached.

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The list above answers the following questions

P–n junction and Thyristor Comparison

P–n junction has 63 relations, while Thyristor has 85. As they have in common 16, the Jaccard index is 10.81% = 16 / (63 + 85).

References

This article shows the relationship between P–n junction and Thyristor. To access each article from which the information was extracted, please visit:

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