Radiation hardening and Threshold voltage

Shortcuts: Differences, Similarities, Jaccard Similarity Coefficient, References.

Difference between Radiation hardening and Threshold voltage

Radiation hardening vs. Threshold voltage

Radiation hardening is the act of making electronic components and systems resistant to damage or malfunctions caused by ionizing radiation (particle radiation and high-energy electromagnetic radiation), such as those encountered in outer space and high-altitude flight, around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare. The threshold voltage, commonly abbreviated as Vth, of a field-effect transistor (FET) is the minimum gate-to-source voltage VGS (th) that is needed to create a conducting path between the source and drain terminals.

Similarities between Radiation hardening and Threshold voltage

Radiation hardening and Threshold voltage have 2 things in common (in Unionpedia): Electric current, MOSFET.

Electric current

An electric current is a flow of electric charge.

Electric current and Radiation hardening · Electric current and Threshold voltage · See more »

MOSFET

MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.

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The list above answers the following questions

What Radiation hardening and Threshold voltage have in common
What are the similarities between Radiation hardening and Threshold voltage

Radiation hardening and Threshold voltage Comparison

Radiation hardening has 185 relations, while Threshold voltage has 14. As they have in common 2, the Jaccard index is 1.01% = 2 / (185 + 14).

References

This article shows the relationship between Radiation hardening and Threshold voltage. To access each article from which the information was extracted, please visit:

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