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24 relations: Brian Ridley, Charge trap flash, Dynamic voltage scaling, EEPROM, Failure of electronic components, Farhat N. Beg, Flash memory, Floating-gate MOSFET, HCI, HEI, Herbert Kroemer, High-temperature operating life, Index of physics articles (H), Michael Roukes, Negative-bias temperature instability, Plasmonic nanoparticles, Radiation hardening, Sankar Das Sarma, Saturation velocity, Sherlock Automated Design Analysis, Short-channel effect, Third-generation photovoltaic cell, Tunnel injection, Zener diode.
Brian Ridley
Brian Kidd Ridley (born 2 March 1931) is a British solid-state physicist specialising in semiconductor theory.
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Charge trap flash
Charge Trap Flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory.
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Dynamic voltage scaling
Dynamic voltage scaling is a power management technique in computer architecture, where the voltage used in a component is increased or decreased, depending upon circumstances.
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EEPROM
EEPROM (also E2PROM) stands for Electrically Erasable Programmable Read-Only Memory and is a type of non-volatile memory used in computers, integrated in microcontrollers for smart cards and remote keyless system, and other electronic devices to store relatively small amounts of data but allowing individual bytes to be erased and reprogrammed.
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Failure of electronic components
Electronic components have a wide range of failure modes.
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Farhat N. Beg
Farhat N. Beg from the University of California, San Diego, was awarded the status of Fellow in the American Physical Society, after he was nominated by his Division of Plasma Physics in 2009, for contributions to the understanding of physics of short pulse high intensity laser matter interactions and pulsed power driven dense Z-pinches.
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Flash memory
Flash memory is an electronic (solid-state) non-volatile computer storage medium that can be electrically erased and reprogrammed.
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Floating-gate MOSFET
The floating-gate MOSFET (FGMOS) is a field-effect transistor, whose structure is similar to a conventional MOSFET.
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HCI
HCI may refer to.
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HEI
Hei or HEI may refer to.
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Herbert Kroemer
Herbert Kroemer (born August 25, 1928), a professor of electrical and computer engineering at the University of California, Santa Barbara, received his Ph.D. in theoretical physics in 1952 from the University of Göttingen, Germany, with a dissertation on hot electron effects in the then-new transistor, setting the stage for a career in research on the physics of semiconductor devices.
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High-temperature operating life
High-temperature operating life (HTOL) is a reliability test applied to integrated circuits (ICs) to determine their intrinsic reliability.
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Index of physics articles (H)
The index of physics articles is split into multiple pages due to its size.
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Michael Roukes
Michael Lee Roukes is an American experimental physicist, nanoscientist, and the Frank J. Roshek Professor of Physics, Applied Physics, and Bioengineering at the California Institute of Technology (Caltech).
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Negative-bias temperature instability
Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs.
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Plasmonic nanoparticles
Plasmonic nanoparticles are particles whose electron density can couple with electromagnetic radiation of wavelengths that are far larger than the particle due to the nature of the dielectric-metal interface between the medium and the particles: unlike in a pure metal where there is a maximum limit on what size wavelength can be effectively coupled based on the material size.
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Radiation hardening
Radiation hardening is the act of making electronic components and systems resistant to damage or malfunctions caused by ionizing radiation (particle radiation and high-energy electromagnetic radiation), such as those encountered in outer space and high-altitude flight, around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.
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Sankar Das Sarma
Sankar Das Sarma is an India-born American theoretical condensed matter physicist, who has worked in the areas of strongly correlated materials, graphene, semiconductor physics, low-dimensional systems, topological matter, quantum Hall effect, nanoscience, spintronics, Dirac and Weyl materials, collective properties of ultra-cold atomic and molecular systems, optical lattice, many-body theory, and quantum computation.
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Saturation velocity
Saturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields.
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Sherlock Automated Design Analysis
Sherlock Automated Design Analysis™ is a software tool developed by DfR Solutions for analyzing, grading, and certifying the expected reliability of products at the circuit card assembly level.
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Short-channel effect
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion-layer widths of the source and drain junctions.
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Third-generation photovoltaic cell
Third-generation photovoltaic cells are solar cells that are potentially able to overcome the Shockley–Queisser limit of 31–41% power efficiency for single bandgap solar cells.
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Tunnel injection
Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator.
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Zener diode
A Zener diode is a particular type of diode that, unlike a normal one, allows current to flow not only from its anode to its cathode, but also in the reverse direction, when the Zener voltage is reached.
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References
[1] https://en.wikipedia.org/wiki/Hot-carrier_injection
