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13 relations: Active load, Bipolar junction transistor, Channel length modulation, Common emitter, Current mirror, Depletion region, Hybrid-pi model, James M. Early, MOSFET, Output impedance, P–n junction, Small-signal model, SPICE.
Active load
An active load or dynamic load is a component or a circuit that functions as a current-stable nonlinear resistor.
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Bipolar junction transistor
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Channel length modulation
One of several short-channel effects in MOSFET scaling, channel length modulation (CLM) is a shortening of the length of the inverted channel region with increase in drain bias for large drain biases.
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Common emitter
In electronics, a common-emitter amplifier is one of three basic single-stage bipolar-junction-transistor (BJT) amplifier topologies, typically used as the voltage amplifier.
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Current mirror
A current mirror is a circuit designed to copy a current through one active device by controlling the current in another active device of a circuit, keeping the output current constant regardless of loading.
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Depletion region
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field.
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Hybrid-pi model
The hybrid-pi model is a popular circuit model used for analyzing the small signal behavior of bipolar junction and field effect transistors.
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James M. Early
James M. Early (July 25, 1922 – January 12, 2004) was an American engineer, best known for his work on transistors and charge-coupled device imagers.
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MOSFET
MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.
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Output impedance
The output impedance of an electrical network is the measure of the opposition to current flow (impedance), both static (resistance) and dynamic (reactance), into the load network being connected that is internal to the electrical source.
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P–n junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor.
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Small-signal model
Small-signal modeling is a common analysis technique in electronics engineering which is used to approximate the behavior of electronic circuits containing nonlinear devices with linear equations.
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SPICE
SPICE (Simulation Program with Integrated Circuit Emphasis)Nagel, L. W, and Pederson, D. O., SPICE (Simulation Program with Integrated Circuit Emphasis), Memorandum No.
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