Isotropic etching

Isotropic etching (e.g. wet etching or chemical etching) is a method commonly used in semiconductors to remove material from a substrate via a chemical process using an etchant substance. ^[1]

4 relations: Dry etching, Etching (microfabrication), Plasma (physics), Semiconductor.

Dry etching

Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface.

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Etching (microfabrication)

Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing.

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Plasma (physics)

Plasma (Henry George Liddell, Robert Scott, A Greek English Lexicon, on Perseus) is one of the four fundamental states of matter, and was first described by chemist Irving Langmuir in the 1920s.

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Semiconductor

A semiconductor material has an electrical conductivity value falling between that of a conductor – such as copper, gold etc.

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Etching (isotropic), Etching (plasma).

References

[1] https://en.wikipedia.org/wiki/Isotropic_etching

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