Low-power electronics and MOSFET

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Difference between Low-power electronics and MOSFET

Low-power electronics vs. MOSFET

Low-power electronics are electronics, such as notebook processors, that have been designed to use less electric power. MOSFET showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120nbspvolts in the ''off'' state, and can conduct a continuous current of 30 amperes in the ''on'' state, dissipating up to about 100 watts and controlling a load of over 2000 watts. A matchstick is pictured for scale. A cross-section through an nMOSFET when the gate voltage ''V''GS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an ''n''-type conductive channel in the substrate below the oxide, which allows electrons to flow between the ''n''-doped terminals; the switch is on. Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon.

Capacitor

A capacitor is a passive two-terminal electrical component that stores potential energy in an electric field.

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CMOS

Complementary metal–oxide–semiconductor, abbreviated as CMOS, is a technology for constructing integrated circuits.

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Moore's law

Moore's law is the observation that the number of transistors in a dense integrated circuit doubles about every two years.

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Nanometre

The nanometre (International spelling as used by the International Bureau of Weights and Measures; SI symbol: nm) or nanometer (American spelling) is a unit of length in the metric system, equal to one billionth (short scale) of a metre (m).

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RC time constant

The RC time constant, also called tau, the time constant (in seconds) of an RC circuit, is equal to the product of the circuit resistance (in ohms) and the circuit capacitance (in farads), i.e. It is the time required to charge the capacitor, through the resistor, from an initial charge voltage of zero to ≈63.2 percent of the value of an applied DC voltage, or to discharge the capacitor through the same resistor to ≈36.8 percent of its initial charge voltage.

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Subthreshold conduction

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

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Threshold voltage

The threshold voltage, commonly abbreviated as Vth, of a field-effect transistor (FET) is the minimum gate-to-source voltage VGS (th) that is needed to create a conducting path between the source and drain terminals.

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Transistor

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

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