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Direct and indirect band gaps and Heterojunction

Shortcuts: Differences, Similarities, Jaccard Similarity Coefficient, References.

Difference between Direct and indirect band gaps and Heterojunction

Direct and indirect band gaps vs. Heterojunction

In semiconductor physics, the band gap of a semiconductor is of two types, a direct band gap or an indirect band gap. A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors.

Similarities between Direct and indirect band gaps and Heterojunction

Direct and indirect band gaps and Heterojunction have 8 things in common (in Unionpedia): Band gap, Effective mass (solid-state physics), Electron hole, Exciton, Gallium arsenide, Laser diode, Semiconductor, Valence and conduction bands.

Band gap

In solid-state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron states can exist.

Band gap and Direct and indirect band gaps · Band gap and Heterojunction · See more »

Effective mass (solid-state physics)

In solid state physics, a particle's effective mass (often denoted) is the mass that it seems to have when responding to forces, or the mass that it seems to have when interacting with other identical particles in a thermal distribution.

Direct and indirect band gaps and Effective mass (solid-state physics) · Effective mass (solid-state physics) and Heterojunction · See more »

Electron hole

In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice.

Direct and indirect band gaps and Electron hole · Electron hole and Heterojunction · See more »

Exciton

An exciton is a bound state of an electron and an electron hole which are attracted to each other by the electrostatic Coulomb force.

Direct and indirect band gaps and Exciton · Exciton and Heterojunction · See more »

Gallium arsenide

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

Direct and indirect band gaps and Gallium arsenide · Gallium arsenide and Heterojunction · See more »

Laser diode

A laser diode, (LD), injection laser diode (ILD), or diode laser is a semiconductor device similar to a light-emitting diode in which the laser beam is created at the diode's junction.

Direct and indirect band gaps and Laser diode · Heterojunction and Laser diode · See more »

Semiconductor

A semiconductor material has an electrical conductivity value falling between that of a conductor – such as copper, gold etc.

Direct and indirect band gaps and Semiconductor · Heterojunction and Semiconductor · See more »

Valence and conduction bands

In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level and thus determine the electrical conductivity of the solid.

Direct and indirect band gaps and Valence and conduction bands · Heterojunction and Valence and conduction bands · See more »

The list above answers the following questions

Direct and indirect band gaps and Heterojunction Comparison

Direct and indirect band gaps has 41 relations, while Heterojunction has 89. As they have in common 8, the Jaccard index is 6.15% = 8 / (41 + 89).

References

This article shows the relationship between Direct and indirect band gaps and Heterojunction. To access each article from which the information was extracted, please visit:

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