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27 relations: Anisotropy, Chemical milling, Chemical reaction, Deep reactive-ion etching, Dry etching, Electromagnetic field, Etching (microfabrication), Hertz, Inductively coupled plasma, Ion, ISM band, Isotropic etching, Isotropy, Kinetic energy, Microfabrication, Plasma (physics), Plasma etcher, Pressure, Radio frequency, Silicon, Sputtering, Sulfur hexafluoride, Torr, Vacuum, Vacuum pump, Wafer (electronics), Watt.
Anisotropy
Anisotropy, is the property of being directionally dependent, which implies different properties in different directions, as opposed to isotropy.
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Chemical milling
Chemical milling or industrial etching is the subtractive manufacturing process of using baths of temperature-regulated etching chemicals to remove material to create an object with the desired shape.
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Chemical reaction
A chemical reaction is a process that leads to the transformation of one set of chemical substances to another.
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Deep reactive-ion etching
Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios.
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Dry etching
Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface.
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Electromagnetic field
An electromagnetic field (also EMF or EM field) is a physical field produced by electrically charged objects.
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Etching (microfabrication)
Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing.
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Hertz
The hertz (symbol: Hz) is the derived unit of frequency in the International System of Units (SI) and is defined as one cycle per second.
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Inductively coupled plasma
An inductively coupled plasma (ICP) or transformer coupled plasma (TCP) is a type of plasma source in which the energy is supplied by electric currents which are produced by electromagnetic induction, that is, by time-varying magnetic fields.
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Ion
An ion is an atom or molecule that has a non-zero net electrical charge (its total number of electrons is not equal to its total number of protons).
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ISM band
The industrial, scientific and medical (ISM) radio bands are radio bands (portions of the radio spectrum) reserved internationally for the use of radio frequency (RF) energy for industrial, scientific and medical purposes other than telecommunications.
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Isotropic etching
Isotropic etching (e.g. wet etching or chemical etching) is a method commonly used in semiconductors to remove material from a substrate via a chemical process using an etchant substance.
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Isotropy
Isotropy is uniformity in all orientations; it is derived from the Greek isos (ἴσος, "equal") and tropos (τρόπος, "way").
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Kinetic energy
In physics, the kinetic energy of an object is the energy that it possesses due to its motion.
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Microfabrication
Microfabrication is the process of fabricating miniature structures of micrometre scales and smaller.
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Plasma (physics)
Plasma (Henry George Liddell, Robert Scott, A Greek English Lexicon, on Perseus) is one of the four fundamental states of matter, and was first described by chemist Irving Langmuir in the 1920s.
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Plasma etcher
A plasma etcher, or etching tool, is a tool used in the production of semiconductor devices.
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Pressure
Pressure (symbol: p or P) is the force applied perpendicular to the surface of an object per unit area over which that force is distributed.
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Radio frequency
Radio frequency (RF) refers to oscillatory change in voltage or current in a circuit, waveguide or transmission line in the range extending from around twenty thousand times per second to around three hundred billion times per second, roughly between the upper limit of audio and the lower limit of infrared.
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Silicon
Silicon is a chemical element with symbol Si and atomic number 14.
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Sputtering
Sputtering is a process whereby particles are ejected from a solid target material due to bombardment of the target by energetic particles, particularly gas ions in a laboratory.
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Sulfur hexafluoride
Sulfur hexafluoride (SF6) is an inorganic, colorless, odorless, non-flammable, extremely potent greenhouse gas, and an excellent electrical insulator.
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Torr
The torr (symbol: Torr) is a unit of pressure based on an absolute scale, now defined as exactly of a standard atmosphere (101.325 kPa).
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Vacuum
Vacuum is space devoid of matter.
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Vacuum pump
A vacuum pump is a device that removes gas molecules from a sealed volume in order to leave behind a partial vacuum.
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Wafer (electronics)
A wafer, also called a slice or substrate, is a thin slice of semiconductor material, such as a crystalline silicon, used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells.
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Watt
The watt (symbol: W) is a unit of power.
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Reactive ion etch, Reactive ion etching.
References
[1] https://en.wikipedia.org/wiki/Reactive-ion_etching
