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56 relations: Aluminium gallium arsenide, Aluminium nitride, Amorphous silicon, Arsenic, Band gap, Boron arsenide, Cadmium zinc telluride, Carrier generation and recombination, Carrier lifetime, Cathodoluminescence, Chlorographene, Contact electrification, Copper indium gallium selenide solar cells, Diode, Electronic band structure, Elliott formula, Gallium, Gallium arsenide, Gallium nitride, Gallium phosphide, Gallium(II) selenide, Germanane, Giant oscillator strength, Heterojunction, I-III-VI semiconductors, Index of electronics articles, Index of physics articles (D), Indium aluminium nitride, Indium arsenide, Indium gallium nitride, Indium phosphide, Intrinsic semiconductor, K·p perturbation theory, Kondo insulator, Laser diode, Lead selenide, Light-emitting diode, List of semiconductor materials, Molybdenite, Molybdenum disulfide, Molybdenum ditelluride, Multi-junction solar cell, Non-radiative recombination, Oleg Losev, Outline of electronics, Penta-graphene, Scanning electron microscope, Schottky junction solar cell, Semimetal, Silicon carbide, ..., Solar cell, Tauc plot, Transition metal dichalcogenide monolayers, Wide-bandgap semiconductor, Wideband materials, Zinc oxide. Expand index (6 more) »
Aluminium gallium arsenide
Aluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap.
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Aluminium nitride
Aluminium nitride (AlN) is a nitride of aluminium.
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Amorphous silicon
Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs.
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Arsenic
Arsenic is a chemical element with symbol As and atomic number 33.
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Band gap
In solid-state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron states can exist.
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Boron arsenide
Boron arsenide is a chemical compound involving boron and arsenic, usually with a chemical formula BAs.
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Cadmium zinc telluride
Cadmium zinc telluride, (CdZnTe) or CZT, is a compound of cadmium, zinc and tellurium or, more strictly speaking, an alloy of cadmium telluride and zinc telluride.
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Carrier generation and recombination
In the solid-state physics of semiconductors, carrier generation and recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated.
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Carrier lifetime
A definition in semiconductor physics, carrier lifetime is defined as the average time it takes for a minority carrier to recombine.
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Cathodoluminescence
Cathodoluminescence is an optical and electromagnetic phenomenon in which electrons impacting on a luminescent material such as a phosphor, cause the emission of photons which may have wavelengths in the visible spectrum.
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Chlorographene
Chlorographene is simply the one-by-one Chlorine covered form of graphene.
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Contact electrification
Contact electrification was an erroneous scientific theory from the Enlightenment that attempted to account for all the sources of electric charge known at the time.
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Copper indium gallium selenide solar cells
A copper indium gallium selenide solar cell (or CIGS cell, sometimes CI(G)S or CIS cell) is a thin-film solar cell used to convert sunlight into electric power.
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Diode
A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other.
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Electronic band structure
In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energies that an electron within the solid may have (called energy bands, allowed bands, or simply bands) and ranges of energy that it may not have (called band gaps or forbidden bands).
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Elliott formula
The Elliott formula describes analytically, or with few adjustable parameters such as the dephasing constant, the light absorption or emission spectra of solids.
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Gallium
Gallium is a chemical element with symbol Ga and atomic number 31.
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Gallium arsenide
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
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Gallium nitride
Gallium nitride is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.
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Gallium phosphide
Gallium phosphide, a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26 eV(300K).
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Gallium(II) selenide
Gallium(II) selenide (GaSe) is a chemical compound.
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Germanane
Germanane is a single-layer crystal composed of germanium with one hydrogen bonded in the z-direction for each atom.
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Giant oscillator strength
Giant oscillator strength is inherent in excitons that are weakly bound to impurities or defects in crystals.
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Heterojunction
A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors.
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I-III-VI semiconductors
I-III-VI2 semiconductors are solid semiconducting materials that contain three or more chemical elements belonging to groups I, III and VI of the periodic table.
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Index of electronics articles
This is an index of articles relating to electronics and electricity or natural electricity and things that run on electricity and things that use or conduct electricity.
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Index of physics articles (D)
The index of physics articles is split into multiple pages due to its size.
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Indium aluminium nitride
Indium aluminium nitride (InAlN) is a direct bandgap semiconductor material used in the manufacture of electronic and photonic devices.
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Indium arsenide
Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic.
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Indium gallium nitride
Indium gallium nitride (InGaN, x1−x) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN).
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Indium phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
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Intrinsic semiconductor
An intrinsic(pure) semiconductor, also called an undoped semiconductor or i-type semiconductor, is a pure semiconductor without any significant dopant species present.
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K·p perturbation theory
In solid-state physics, the k·p perturbation theory is an approximated semi-empirical approach for calculating the band structure (particularly effective mass) and optical properties of crystalline solids.
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Kondo insulator
In solid-state physics, Kondo insulators (also referred as Kondo semiconductors and heavy fermion semiconductors) are understood as materials with strongly correlated electrons, that open up a narrow band gap (in the order of 10 meV) at low temperatures with the chemical potential lying in the gap, whereas in heavy fermions the chemical potential is located in the conduction band.
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Laser diode
A laser diode, (LD), injection laser diode (ILD), or diode laser is a semiconductor device similar to a light-emitting diode in which the laser beam is created at the diode's junction.
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Lead selenide
Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material.
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Light-emitting diode
A light-emitting diode (LED) is a two-lead semiconductor light source.
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List of semiconductor materials
Semiconductor materials are nominally small band gap insulators.
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Molybdenite
Molybdenite is a mineral of molybdenum disulfide, MoS2.
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Molybdenum disulfide
Molybdenum disulfide is an inorganic compound composed of molybdenum and sulfur.
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Molybdenum ditelluride
Molybdenum(IV) telluride, molybdenum ditelluride or just molybdenum telluride is a compound of molybdenum and tellurium with formula MoTe2, corresponding to a mass percentage of 27.32% molybdenum and 72.68% tellurium.
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Multi-junction solar cell
Multi-junction (MJ) solar cells are solar cells with multiple p–n junctions made of different semiconductor materials.
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Non-radiative recombination
Non-radiative recombination is a process in phosphors and semiconductors, whereby charge carriers recombine without releasing photons.
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Oleg Losev
Oleg Vladimirovich Losev (Оле́г Влади́мирович Ло́сев, sometimes spelled Lossev or Lossew in English) (10 May 1903 – 22 January 1942) was a Russian scientist and inventor, An English translation is on the Springer archive who made significant discoveries in the field of semiconductor junctions.
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Outline of electronics
The following outline is provided as an overview of and topical guide to electronics: Electronics – branch of physics, engineering and technology dealing with electrical circuits that involve active semiconductor components and associated passive interconnection technologies.
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Penta-graphene
Penta-graphene is a carbon allotrope composed entirely of carbon pentagons and resembling the Cairo pentagonal tiling.
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Scanning electron microscope
A scanning electron microscope (SEM) is a type of electron microscope that produces images of a sample by scanning the surface with a focused beam of electrons.
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Schottky junction solar cell
In a basic Schottky-junction (Schottky-barrier) solar cell, an interface between a metal and a semiconductor provides the band bending necessary for charge separation.
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Semimetal
A semimetal is a material with a very small overlap between the bottom of the conduction band and the top of the valence band.
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Silicon carbide
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon.
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Solar cell
A solar cell, or photovoltaic cell, is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect, which is a physical and chemical phenomenon.
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Tauc plot
A Tauc plot is used to determine the optical bandgap, or Tauc gap, in semiconductors.
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Transition metal dichalcogenide monolayers
Transition metal dichalcogenide (TMD) monolayers are atomically thin semiconductors of the type MX2, with M a transition metal atom (Mo, W, etc.) and X a chalcogen atom (S, Se, or Te).
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Wide-bandgap semiconductor
Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors.
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Wideband materials
Wideband material refers to material that can convey Microwave signals (light/sound) over a variety of wavelengths.
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Zinc oxide
Zinc oxide is an inorganic compound with the formula ZnO.
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Direct and indirect bandgaps, Direct band gap, Direct bandgap, Direct gap, Indirect band gap, Indirect bandgap.
References
[1] https://en.wikipedia.org/wiki/Direct_and_indirect_band_gaps
