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22 relations: Atomic layer deposition, Centre national de la recherche scientifique, Chemical formula, Chemical vapor deposition, Dow Chemical Company, Epitaxy, Flash memory, Germane, Germanium, GeSbTe, Indium gallium arsenide, Indium gallium phosphide, Metalorganic vapour phase epitaxy, Metalorganics, Organogermanium compound, Pyrophoricity, Rohm and Haas, Semiconductor, Silicon, Silicon-germanium, Solar cell, Strained silicon.
Atomic layer deposition
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas phase chemical process.
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Centre national de la recherche scientifique
The French National Center for Scientific Research (Centre national de la recherche scientifique, CNRS) is the largest governmental research organisation in France and the largest fundamental science agency in Europe.
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Chemical formula
A chemical formula is a way of presenting information about the chemical proportions of atoms that constitute a particular chemical compound or molecule, using chemical element symbols, numbers, and sometimes also other symbols, such as parentheses, dashes, brackets, commas and plus (+) and minus (−) signs.
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Chemical vapor deposition
Chemical vapor deposition (CVD) is deposition method used to produce high quality, high-performance, solid materials, typically under vacuum.
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Dow Chemical Company
The Dow Chemical Company, commonly referred to as Dow, is an American multinational chemical corporation headquartered in Midland, Michigan, United States, and the predecessor of the merged company DowDuPont.
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Epitaxy
Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate.
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Flash memory
Flash memory is an electronic (solid-state) non-volatile computer storage medium that can be electrically erased and reprogrammed.
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Germane
Germane is the chemical compound with the formula GeH4, and the germanium analogue of methane.
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Germanium
Germanium is a chemical element with symbol Ge and atomic number 32.
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GeSbTe
GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications.
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Indium gallium arsenide
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs).
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Indium gallium phosphide
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus.
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Metalorganic vapour phase epitaxy
Metalorganic vapour phase epitaxy (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single or polycrystalline thin films.
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Metalorganics
Metal-organic compounds (jargon: metalorganics, metallo-organics) are a class of chemical compounds that contain metals and organic ligands, which confer solubility in organic solvents or volatility.
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Organogermanium compound
Organogermanium compounds are organometallic compounds containing a carbon to germanium or hydrogen to germanium chemical bond.
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Pyrophoricity
A pyrophoric substance (from Greek πυροφόρος, pyrophoros, "fire-bearing") ignites spontaneously in air at or below 55 °C (130 °F).
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Rohm and Haas
Rohm and Haas Company is a manufacturer of speciality chemicals for end use markets such as building and construction, electronic devices, packaging, household and personal care products.
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Semiconductor
A semiconductor material has an electrical conductivity value falling between that of a conductor – such as copper, gold etc.
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Silicon
Silicon is a chemical element with symbol Si and atomic number 14.
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Silicon-germanium
SiGe, or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex.
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Solar cell
A solar cell, or photovoltaic cell, is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect, which is a physical and chemical phenomenon.
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Strained silicon
Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance.
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Redirects here:
IBGe, Isobutylgermanium trihydride.
References
[1] https://en.wikipedia.org/wiki/Isobutylgermane
